Generation of a frequency comb and applications thereof
Abstract
Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, cause by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.
- Inventors:
- Issue Date:
- Research Org.:
- LANL (Los Alamos National Laboratory (LANL), Los Alamos, NM (United States))
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1109345
- Patent Number(s):
- 8,601,607
- Application Number:
- 13/625,780
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Hagmann, Mark J, and Yarotski, Dmitry A. Generation of a frequency comb and applications thereof. United States: N. p., 2013.
Web.
Hagmann, Mark J, & Yarotski, Dmitry A. Generation of a frequency comb and applications thereof. United States.
Hagmann, Mark J, and Yarotski, Dmitry A. Tue .
"Generation of a frequency comb and applications thereof". United States. https://www.osti.gov/servlets/purl/1109345.
@article{osti_1109345,
title = {Generation of a frequency comb and applications thereof},
author = {Hagmann, Mark J and Yarotski, Dmitry A},
abstractNote = {Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, cause by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {12}
}
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