Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
Abstract
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
- Inventors:
- Issue Date:
- Research Org.:
- William Marsh Rice University, Houston, TX, USA
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1109089
- Patent Number(s):
- 8592791
- Application Number:
- 12/848,626
- Assignee:
- William Marsh Rice University (Houston, TX)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- FC36-05G015073; AC05-000R22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Tour, James M, Yao, Jun, Natelson, Douglas, Zhong, Lin, and He, Tao. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof. United States: N. p., 2013.
Web.
Tour, James M, Yao, Jun, Natelson, Douglas, Zhong, Lin, & He, Tao. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof. United States.
Tour, James M, Yao, Jun, Natelson, Douglas, Zhong, Lin, and He, Tao. Tue .
"Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof". United States. https://www.osti.gov/servlets/purl/1109089.
@article{osti_1109089,
title = {Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof},
author = {Tour, James M and Yao, Jun and Natelson, Douglas and Zhong, Lin and He, Tao},
abstractNote = {In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 26 00:00:00 EST 2013},
month = {Tue Nov 26 00:00:00 EST 2013}
}
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