Optical devices featuring nonpolar textured semiconductor layers

Title: Optical devices featuring nonpolar textured semiconductor layers

Full Record
Other Related Research

Abstract

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Inventors:: Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

Issue Date:: 2013-11-26

Research Org.:: Boston University, Boston, MA, USA

Sponsoring Org.:: USDOE

OSTI Identifier:: 1109087

Patent Number(s):: 8,592,800

Application Number:: 12/920,391

Assignee:: Trustees of Boston University (Boston, MA)

DOE Contract Number:: FC26-04NT42275

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers.  United States: N. p., 2013. 
        Web.

Copy to clipboard


                    Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, & Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers.  United States.

Copy to clipboard


                    Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Tue .  
        "Optical devices featuring nonpolar textured semiconductor layers".  United States.  https://www.osti.gov/servlets/purl/1109087.

Copy to clipboard


                    
@article{osti_1109087,

  title        = {Optical devices featuring nonpolar textured semiconductor layers},

  author       = {Moustakas, Theodore D and Moldawer, Adam and Bhattacharyya, Anirban and Abell, Joshua},

  abstractNote = {A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {11}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Optical devices featuring textured semiconductor layers

Patent Moustakas, Theodore D [Dover, MA]; Cabalu, Jasper S [Cary, NC]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.
Full Text Available
Optical devices featuring textured semiconductor layers

Patent Moustakas, Theodore D [Dover, MA]; Cabalu, Jasper S [Cary, NC]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.
Full Text Available
Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Patent Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; ...

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatusmore » are also disclosed.« less
Full Text Available
Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

Patent Sopori, Bhushan; Rangappan, Anikara

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.
Full Text Available
Method for simultaneous modification of multiple semiconductor device features

Patent Shul, Randy J.; Sniegowski, Jeffry J.; Larson, Kurt W.; ...

Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into themore »« less
Full Text Available

Similar Records