Title: Optical devices featuring nonpolar textured semiconductor layers

Abstract

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Inventors:

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

Issue Date:

2013-11-26

Research Org.:

Boston University, Boston, MA, USA

Sponsoring Org.:

USDOE

OSTI Identifier:

1109087

Patent Number(s):

8592800

Application Number:

12/920,391

Assignee:

Trustees of Boston University (Boston, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02378 - {Silicon carbide}
H01L21/02389 - {Nitrides}
H01L21/02403 - {Oxides}
H01L21/0242 - {Crystalline insulating materials}
H01L21/02433 - {Crystal orientation}
H01L21/0254 - {Nitrides}
H01L21/02609 - {Crystal orientation}
H01L33/16 - with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L33/20 - with a particular shape, e.g. curved or truncated substrate
H01L33/24 - of the light emitting region, e.g. non-planar junction
H01L33/32 - containing nitrogen

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DOE Contract Number:  

FC26-04NT42275

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE