Optical devices featuring nonpolar textured semiconductor layers
Abstract
A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.
- Inventors:
- Issue Date:
- Research Org.:
- Boston University, Boston, MA, USA
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1109087
- Patent Number(s):
- 8592800
- Application Number:
- 12/920,391
- Assignee:
- Trustees of Boston University (Boston, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-04NT42275
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers. United States: N. p., 2013.
Web.
Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, & Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers. United States.
Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Tue .
"Optical devices featuring nonpolar textured semiconductor layers". United States. https://www.osti.gov/servlets/purl/1109087.
@article{osti_1109087,
title = {Optical devices featuring nonpolar textured semiconductor layers},
author = {Moustakas, Theodore D and Moldawer, Adam and Bhattacharyya, Anirban and Abell, Joshua},
abstractNote = {A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}
Works referenced in this record:
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
journal, June 2001
- Tadatomo, Kazuyuki; Okagawa, Hiroaki; Ohuchi, Youichiro
- Japanese Journal of Applied Physics, Vol. 40, Issue Part 2, No. 6B
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993
- Schnitzer, I.; Yablonovitch, E.; Caneau, C.
- Applied Physics Letters, Vol. 63, Issue 16
Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
journal, January 2002
- Windisch, R.; Rooman, C.; Dutta, B.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array
journal, August 2004
- Sun, Ching-Cherng
- Optical Engineering, Vol. 43, Issue 8
Outlook for high efficiency solar cells to be used with and without concentration
journal, April 1995
- Sharma, V. K.; Colangelo, A.; Spagna, G.
- Energy Conversion and Management, Vol. 36, Issue 4
Molecular-Scale Mlcroporous Superlattices
journal, February 1987
- Deckman, H. W.; Abeles, B.; Dunsmuir, J. H.
- MRS Bulletin, Vol. 12, Issue 1
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
journal, December 2002
- Yamada, Motokazu; Mitani, Tomotsugu; Narukawa, Yukio
- Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 12B