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Title: Optical devices featuring nonpolar textured semiconductor layers

Abstract

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Inventors:
; ; ;
Issue Date:
Research Org.:
Boston University, Boston, MA, USA
Sponsoring Org.:
USDOE
OSTI Identifier:
1109087
Patent Number(s):
8592800
Application Number:
12/920,391
Assignee:
Trustees of Boston University (Boston, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC26-04NT42275
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers. United States: N. p., 2013. Web.
Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, & Abell, Joshua. Optical devices featuring nonpolar textured semiconductor layers. United States.
Moustakas, Theodore D, Moldawer, Adam, Bhattacharyya, Anirban, and Abell, Joshua. Tue . "Optical devices featuring nonpolar textured semiconductor layers". United States. https://www.osti.gov/servlets/purl/1109087.
@article{osti_1109087,
title = {Optical devices featuring nonpolar textured semiconductor layers},
author = {Moustakas, Theodore D and Moldawer, Adam and Bhattacharyya, Anirban and Abell, Joshua},
abstractNote = {A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

Works referenced in this record:

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
journal, June 2001


30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993


Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
journal, January 2002


Outlook for high efficiency solar cells to be used with and without concentration
journal, April 1995


Molecular-Scale Mlcroporous Superlattices
journal, February 1987


InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
journal, December 2002