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Title: Hybrid anode for semiconductor radiation detectors

Abstract

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
BNL (Brookhaven National Laboratory (BNL), Upton, NY (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1108720
Patent Number(s):
8,586,936
Application Number:
13/099,001
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, and James, Ralph B. Hybrid anode for semiconductor radiation detectors. United States: N. p., 2013. Web.
Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, & James, Ralph B. Hybrid anode for semiconductor radiation detectors. United States.
Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, and James, Ralph B. Tue . "Hybrid anode for semiconductor radiation detectors". United States. https://www.osti.gov/servlets/purl/1108720.
@article{osti_1108720,
title = {Hybrid anode for semiconductor radiation detectors},
author = {Yang, Ge and Bolotnikov, Aleksey E and Camarda, Guiseppe and Cui, Yonggang and Hossain, Anwar and Kim, Ki Hyun and James, Ralph B},
abstractNote = {The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

Patent:

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