Hybrid anode for semiconductor radiation detectors

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

Title: Hybrid anode for semiconductor radiation detectors

Abstract

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Inventors:: Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

Issue Date:: 2013-11-19

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1108720

Patent Number(s):: 8586936

Application Number:: 13/099,001

Assignee:: Brookhaven Science Associates, LLC (Upton, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/085 - {the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays}

G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
G01T1/241 - {Electrode arrangements, e.g. continuous or parallel strips or the like

Show less

DOE Contract Number:: AC02-98CH10886

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats


                    Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, and James, Ralph B. Hybrid anode for semiconductor radiation detectors.  United States: N. p., 2013. 
        Web.

Copy to clipboard


                    Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, & James, Ralph B. Hybrid anode for semiconductor radiation detectors.  United States.

Copy to clipboard


                    Yang, Ge, Bolotnikov, Aleksey E, Camarda, Guiseppe, Cui, Yonggang, Hossain, Anwar, Kim, Ki Hyun, and James, Ralph B. Tue .  
        "Hybrid anode for semiconductor radiation detectors".  United States.  https://www.osti.gov/servlets/purl/1108720.

Copy to clipboard


                    
@article{osti_1108720,

  title        = {Hybrid anode for semiconductor radiation detectors},

  author       = {Yang, Ge and Bolotnikov, Aleksey E and Camarda, Guiseppe and Cui, Yonggang and Hossain, Anwar and Kim, Ki Hyun and James, Ralph B},

  abstractNote = {The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {11}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Effects of surface roughness on large-volume CdZnTe nuclear radiation detectors and removal of surface damage by chemical etching
conference, January 2004

Wright, Gomez W.; Camarda, Giuseppe S.; Kakuno, Edson
Optical Science and Technology, SPIE's 48th Annual Meeting, SPIE Proceedings
https://doi.org/10.1117/12.510180

Charge Transport in Arrays of Semiconductor Gamma-Ray Detectors
journal, July 1995

Barrett, H. H.; Eskin, J. D.; Barber, H. B.
Physical Review Letters, Vol. 75, Issue 1
https://doi.org/10.1103/PhysRevLett.75.156

New results from performance studies of Frisch-grid CdZnTe detectors
conference, October 2004

Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Carini, Gabriella A.
Optical Science and Technology, the SPIE 49th Annual Meeting, SPIE Proceedings
https://doi.org/10.1117/12.563393

Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors
conference, August 2006

Szeles, Csaba; Bale, Derek; Grosholz, Jr., Joseph
SPIE Optics + Photonics, SPIE Proceedings
https://doi.org/10.1117/12.683552

Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry
conference, October 1999

Parnham, Kevin B.; Szeles, Csaba; Lynn, Kelvin G.
SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings
https://doi.org/10.1117/12.366620

Performance characteristics of Frisch-ring CdZnTe detectors
journal, April 2006

Bolotnikov, A. E.; Camarda, G. C.; Carini, G. A.
IEEE Transactions on Nuclear Science, Vol. 53, Issue 2
https://doi.org/10.1109/TNS.2006.871509

Currents to Conductors Induced by a Moving Point Charge
journal, October 1938

Shockley, W.
Journal of Applied Physics, Vol. 9, Issue 10
https://doi.org/10.1063/1.1710367

A capacitive Frisch grid structure for CdZnTe detectors
journal, June 2001

Montemont, G.; Arques, M.; Verger, L.
IEEE Transactions on Nuclear Science, Vol. 48, Issue 3
https://doi.org/10.1109/23.940065

Currents Induced by Electron Motion
journal, September 1939

Ramo, S.
Proceedings of the IRE, Vol. 27, Issue 9
https://doi.org/10.1109/JRPROC.1939.228757

Similar Records in DOE Patents and OSTI.GOV collections:

Nano structural anodes for radiation detectors

Patent Cordaro, Joseph V.; Serkiz, Steven M.; McWhorter, Christopher S.; ...

Anodes for proportional radiation counters and a process of making the anodes is provided. The nano-sized anodes when present within an anode array provide: significantly higher detection efficiencies due to the inherently higher electric field, are amenable to miniaturization, have low power requirements, and exhibit a small electromagnetic field signal. The nano-sized anodes with the incorporation of neutron absorbing elements (e.g., .sup.10B) allow the use of neutron detectors that do not use .sup.3He.
Full Text Available
Yttrium contacts for germanium semiconductor radiation detectors

Patent Hull, Ethan; Pehl, Richard H.; Suttle, Bruce; ...

A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
Full Text Available
Semiconductor radiation detector

Patent Patt, Bradley E [Sherman Oaks, CA]; Iwanczyk, Jan S [Los Angeles, CA]; Tull, Carolyn R [Orinda, CA]; ...

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can bemore » « less
Full Text Available
Electron gas grid semiconductor radiation detectors

Patent Lee, Edwin Y [Livermore, CA]; James, Ralph B [Livermore, CA]

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well tomore » « less
Full Text Available
Wafer-fused semiconductor radiation detector

Patent Lee, Edwin Y [Livermore, CA]; James, Ralph B [Livermore, CA]

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizesmore » « less
Full Text Available

Similar Records

Title: Hybrid anode for semiconductor radiation detectors

Abstract

Citation Formats

Effects of surface roughness on large-volume CdZnTe nuclear radiation detectors and removal of surface damage by chemical etching conference, January 2004

Charge Transport in Arrays of Semiconductor Gamma-Ray Detectors journal, July 1995

New results from performance studies of Frisch-grid CdZnTe detectors conference, October 2004

Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors conference, August 2006

Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry conference, October 1999

Performance characteristics of Frisch-ring CdZnTe detectors journal, April 2006

Currents to Conductors Induced by a Moving Point Charge journal, October 1938

A capacitive Frisch grid structure for CdZnTe detectors journal, June 2001

Currents Induced by Electron Motion journal, September 1939

Effects of surface roughness on large-volume CdZnTe nuclear radiation detectors and removal of surface damage by chemical etching
conference, January 2004

Charge Transport in Arrays of Semiconductor Gamma-Ray Detectors
journal, July 1995

New results from performance studies of Frisch-grid CdZnTe detectors
conference, October 2004

Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors
conference, August 2006

Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry
conference, October 1999

Performance characteristics of Frisch-ring CdZnTe detectors
journal, April 2006

Currents to Conductors Induced by a Moving Point Charge
journal, October 1938

A capacitive Frisch grid structure for CdZnTe detectors
journal, June 2001

Currents Induced by Electron Motion
journal, September 1939