Title: Metal deposition using seed layers

Abstract

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Inventors:

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

Issue Date:

2013-11-12

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1108012

Patent Number(s):

8580100

Application Number:

12/932,372

Assignee:

Massachusetts Institute of Technology (Cambridge, MA); The Trustees of Boston College (Chestnutt Hill, MA); GMZ Energy, Inc. (Waltham, MA)

Patent Classifications (CPCs):

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25D - PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS

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C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25D - PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS

C25D5/022 - {using masking means
C25D5/10 - Electroplating with more than one layer of the same or of different metals
C25D5/54 - Electroplating {on} non-metallic surfaces {, e.g. on carbon or carbon composites}

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DOE Contract Number:  

FG02-08ER46516

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE