Method for the hydrogenation of poly-si
Abstract
A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1107918
- Patent Number(s):
- 8580661
- Application Number:
- 13/216,304
- Assignee:
- U.S. Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Wang, Qi. Method for the hydrogenation of poly-si. United States: N. p., 2013.
Web.
Wang, Qi. Method for the hydrogenation of poly-si. United States.
Wang, Qi. Tue .
"Method for the hydrogenation of poly-si". United States. https://www.osti.gov/servlets/purl/1107918.
@article{osti_1107918,
title = {Method for the hydrogenation of poly-si},
author = {Wang, Qi},
abstractNote = {A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}
Works referenced in this record:
Hydrogenation of polysilicon thin film transistors
patent, May 2000
- Goodman, Lawrence A.; Kaganowicz, Grzegorz; White, Lawrence K.
- US Patent Document 6,057,182
Method of hydrogenating a poly-silicon layer
patent, April 2006
- Lin, Frank
- US Patent Document 7,026,226