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Title: Optical XOR gate

Abstract

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1107893
Patent Number(s):
8582931
Application Number:
12/973,470
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Vawter, G. Allen. Optical XOR gate. United States: N. p., 2013. Web.
Vawter, G. Allen. Optical XOR gate. United States.
Vawter, G. Allen. Tue . "Optical XOR gate". United States. https://www.osti.gov/servlets/purl/1107893.
@article{osti_1107893,
title = {Optical XOR gate},
author = {Vawter, G. Allen},
abstractNote = {An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

Works referenced in this record:

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40 Gbit∕s XOR and AND gates using polarisation switching within 1 m-long bismuth oxide-based nonlinear fibre
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Optical data latch
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Design and Demonstration of Novel QW Intermixing Scheme for the Integration of UTC-Type Photodiodes With QW-Based Components
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All-Optical Logic xor Gate at 80 Gb/s Using SOA-MZI-DI
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Ultrafast nonlinear interferometer (UNI)-based digital optical circuits and their use in packet switching
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Demonstration of directed XOR/XNOR logic gates using two cascaded microring resonators
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40-Gb/s Widely Tunable Transceivers
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All optical logic gates based on an asymmetric nonlinear directional coupler
journal, June 2006


All-optical logic gates based on nonlinear dielectric films
journal, January 2008


40 Gbit∕s all-optical XOR gate based on hybrid-integrated Mach-Zehnder interferometer
journal, January 2003


All-optical 40 Gbit∕s XOR gate with dual ultrafast nonlinear interferometer
journal, January 2005


All-Optical Processing Based on a Logic xor Gate and a Flip-Flop Memory for Packet-Switched Networks
journal, September 2007