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Title: Proximity charge sensing for semiconductor detectors

Abstract

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Inventors:
; ;
Issue Date:
Research Org.:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1096783
Patent Number(s):
8,552,429
Application Number:
12/604,173
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Luke, Paul N, Tindall, Craig S, and Amman, Mark. Proximity charge sensing for semiconductor detectors. United States: N. p., 2013. Web.
Luke, Paul N, Tindall, Craig S, & Amman, Mark. Proximity charge sensing for semiconductor detectors. United States.
Luke, Paul N, Tindall, Craig S, and Amman, Mark. Tue . "Proximity charge sensing for semiconductor detectors". United States. https://www.osti.gov/servlets/purl/1096783.
@article{osti_1096783,
title = {Proximity charge sensing for semiconductor detectors},
author = {Luke, Paul N and Tindall, Craig S and Amman, Mark},
abstractNote = {A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {10}
}

Patent:

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