Proximity charge sensing for semiconductor detectors
Abstract
A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1096783
- Patent Number(s):
- 8552429
- Application Number:
- 12/604,173
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Luke, Paul N, Tindall, Craig S, and Amman, Mark. Proximity charge sensing for semiconductor detectors. United States: N. p., 2013.
Web.
Luke, Paul N, Tindall, Craig S, & Amman, Mark. Proximity charge sensing for semiconductor detectors. United States.
Luke, Paul N, Tindall, Craig S, and Amman, Mark. Tue .
"Proximity charge sensing for semiconductor detectors". United States. https://www.osti.gov/servlets/purl/1096783.
@article{osti_1096783,
title = {Proximity charge sensing for semiconductor detectors},
author = {Luke, Paul N and Tindall, Craig S and Amman, Mark},
abstractNote = {A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 08 00:00:00 EDT 2013},
month = {Tue Oct 08 00:00:00 EDT 2013}
}
Works referenced in this record:
Direct detect sensor for flat panel displays
patent, December 2008
- Gardner, David W.; Hawryluk, Andrew M.
- US Patent Document 7,466,161
Semiconductor radiation detector with enhanced charge collection
patent, December 2001
- Lingren, Clinton L.; Butler, Jack F.; Apotovsky, Boris
- US Patent Document 6,333,504
High-energy detector
patent, November 2011
- Bolotnikov, Aleksey E.; Camarda, Giuseppe; Cui, Yonggang
- US Patent Document 8,063,378