Additives to silane for thin film silicon photovoltaic devices

Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

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Title: Additives to silane for thin film silicon photovoltaic devices

Abstract

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Inventors:: Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

Issue Date:: 2013-09-17

Research Org.:: Air Products and Chemicals, Inc. (Allentown, PA)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1093446

Patent Number(s):: 8535760

Application Number:: 12/872,806

Assignee:: Air Products and Chemicals, Inc. (Allentown, PA)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/24 - Deposition of silicon only

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02529 - {Silicon carbide}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L31/1824 - {Special manufacturing methods for microcrystalline Si, uc-Si}
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/545 - Microcrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: EE0000580

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, and Langan, John Giles. Additives to silane for thin film silicon photovoltaic devices.  United States: N. p., 2013. 
        Web.

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                    Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, & Langan, John Giles. Additives to silane for thin film silicon photovoltaic devices.  United States.

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                    Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, and Langan, John Giles. Tue .  
        "Additives to silane for thin film silicon photovoltaic devices".  United States.  https://www.osti.gov/servlets/purl/1093446.

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@article{osti_1093446,

  title        = {Additives to silane for thin film silicon photovoltaic devices},

  author       = {Hurley, Patrick Timothy and Ridgeway, Robert Gordon and Hutchison, Katherine Anne and Langan, John Giles},

  abstractNote = {Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {9}

}

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Works referenced in this record:

Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate
journal, February 2001

Nishimoto, Tomonori; Takagi, Tomoko; Kondo, Michio
Solar Energy Materials and Solar Cells, Vol. 66, Issue 1-4
https://doi.org/10.1016/S0927-0248(00)00171-9

Orthotic or prosthetic sleeve formed of elasticized fabric sections having different elastic stiffness
patent, July 2003

Einarsson, Palmi; Asgeirsson, Sigurdur; Janusson, Hilmar
US Patent Document 6,592,539
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6592539

A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network
journal, February 2005

Shimizu, Satoshi; Kondo, Michio; Matsuda, Akihisa
Journal of Applied Physics, Vol. 97, Issue 3
https://doi.org/10.1063/1.1846132

Silicon thin film and method of producing the same
patent, May 1991

Iijima, Shigeru; Tanaka, Kazunobu; Matsuda, Akihisa
US Patent Document 5,017,308
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5017308

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition
journal, April 2003

Han, Daxing; Wang, Keda; Owens, Jessica M.
Journal of Applied Physics, Vol. 93, Issue 7
https://doi.org/10.1063/1.1555680

Amorphous silicon film, its production and photo semiconductor device utilizing such a film
patent, January 1994

Iwamoto, Masayuki; Minami, Koji; Yamaoki, Toshihiko
US Patent Document 5,278,015
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5278015

Microstructure and the light‐induced metastability in hydrogenated amorphous silicon
journal, May 1988

Bhattacharya, Enakshi; Mahan, A. H.
Applied Physics Letters, Vol. 52, Issue 19
https://doi.org/10.1063/1.99089

Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane
journal, August 1998

Platz, R.; Wagner, S.
Applied Physics Letters, Vol. 73, Issue 9
https://doi.org/10.1063/1.122138

Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
journal, February 2002

Koga, Kazunori; Kai, Motohide; Shiratani, Masaharu
Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 2B
https://doi.org/10.1143/JJAP.41.L168

Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma
journal, October 2000

Takai, Madoka; Nishimoto, Tomonori; Kondo, Michio
Applied Physics Letters, Vol. 77, Issue 18
https://doi.org/10.1063/1.1322373

Exploration of the deposition limits of microcrystalline silicon
journal, January 2005

Mataras, D.
Pure and Applied Chemistry, Vol. 77, Issue 2
https://doi.org/10.1351/pac200577020379

Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane
journal, April 2002

Yoon, Jong-Hwan; Lee, Kee-Tae
Journal of Non-Crystalline Solids, Vol. 299-302
https://doi.org/10.1016/S0022-3093(01)00958-9

PECVD of hydrogenated silicon thin films from SiH4+H2+Si2H6 mixtures
journal, March 2004

Hammad, A.; Amanatides, E.; Mataras, D.
Thin Solid Films, Vol. 451-452
https://doi.org/10.1016/j.tsf.2003.10.123

Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
patent, January 1992

Sharp, Kenneth George
US Patent Document 5,082,696
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5082696

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures
journal, September 1984

Vanier, P. E.; Kampas, F. J.; Corderman, R. R.
Journal of Applied Physics, Vol. 56, Issue 6
https://doi.org/10.1063/1.334191

Amorphous silicon solar cell
journal, June 1976

Carlson, D. E.; Wronski, C. R.
Applied Physics Letters, Vol. 28, Issue 11
https://doi.org/10.1063/1.88617

Photoconductive thin film, and photovoltaic device making use of the same
patent, April 2001

Kariya, Toshimitsu
US Patent Document 6,215,061
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6215061

Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
patent, February 2005

Kondo, Takaharu; Sano, Masafumi; Sakai, Akira
US Patent Document 6,855,621
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6855621

Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions
conference, January 2000

Nishimoto, T.; Takai, M.; Kondo, M.
28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
https://doi.org/10.1109/PVSC.2000.916023

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates
patent, October 2002

Mahan, Archie Harvin; Molenbroek, Edith C.; Gallagher, Alan C.
US Patent Document 6,468,885
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6468885

Amorphous semiconductor and amorphous silicon photovoltaic device
patent, February 1985

Hamakawa, Yoshihiro; Tawada, Yoshihisa
US Patent Document 4,499,331
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4499331

Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution
journal, November 1996

Kroll, U.; Meier, J.; Shah, A.
Journal of Applied Physics, Vol. 80, Issue 9
https://doi.org/10.1063/1.363541

Amorphous silicon photovoltaic devices
patent, August 2004

Carlson, David E.; Lin, Guanglian; Ganguly, Gautam
US Patent Document 6,784,361
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6784361

Low-temperature growth of crystalline silicon on a chlorine-terminated surface
journal, November 1999

Guo, Lihui; Toyoshima, Yasutake; Kondo, Michio
Applied Physics Letters, Vol. 75, Issue 22
https://doi.org/10.1063/1.125373

The Influence of the Si-H ₂ Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells
journal, October 1989

Nakamura, Noboru; Takahama, Tsuyoshi; Isomura, Masao
Japanese Journal of Applied Physics, Vol. 28, Issue Part 1, No. 10
https://doi.org/10.1143/JJAP.28.1762

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Similar Records

Title: Additives to silane for thin film silicon photovoltaic devices

Abstract

Citation Formats

Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate journal, February 2001

Orthotic or prosthetic sleeve formed of elasticized fabric sections having different elastic stiffness patent, July 2003

A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network journal, February 2005

Silicon thin film and method of producing the same patent, May 1991

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition journal, April 2003

Amorphous silicon film, its production and photo semiconductor device utilizing such a film patent, January 1994

Microstructure and the light‐induced metastability in hydrogenated amorphous silicon journal, May 1988

Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane journal, August 1998

Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films journal, February 2002

Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma journal, October 2000

Exploration of the deposition limits of microcrystalline silicon journal, January 2005

Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane journal, April 2002

PECVD of hydrogenated silicon thin films from SiH4+H2+Si2H6 mixtures journal, March 2004

Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes patent, January 1992

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures journal, September 1984

Amorphous silicon solar cell journal, June 1976

Photoconductive thin film, and photovoltaic device making use of the same patent, April 2001

Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element patent, February 2005

Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions conference, January 2000

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates patent, October 2002

Amorphous semiconductor and amorphous silicon photovoltaic device patent, February 1985

Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution journal, November 1996

Amorphous silicon photovoltaic devices patent, August 2004

Low-temperature growth of crystalline silicon on a chlorine-terminated surface journal, November 1999

The Influence of the Si-H 2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells journal, October 1989

Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate
journal, February 2001

Orthotic or prosthetic sleeve formed of elasticized fabric sections having different elastic stiffness
patent, July 2003

A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network
journal, February 2005

Silicon thin film and method of producing the same
patent, May 1991

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition
journal, April 2003

Amorphous silicon film, its production and photo semiconductor device utilizing such a film
patent, January 1994

Microstructure and the light‐induced metastability in hydrogenated amorphous silicon
journal, May 1988

Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane
journal, August 1998

Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
journal, February 2002

Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma
journal, October 2000

Exploration of the deposition limits of microcrystalline silicon
journal, January 2005

Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane
journal, April 2002

PECVD of hydrogenated silicon thin films from SiH4+H2+Si2H6 mixtures
journal, March 2004

Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
patent, January 1992

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures
journal, September 1984

Amorphous silicon solar cell
journal, June 1976

Photoconductive thin film, and photovoltaic device making use of the same
patent, April 2001

Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
patent, February 2005

Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions
conference, January 2000

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates
patent, October 2002

Amorphous semiconductor and amorphous silicon photovoltaic device
patent, February 1985

Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution
journal, November 1996

Amorphous silicon photovoltaic devices
patent, August 2004

Low-temperature growth of crystalline silicon on a chlorine-terminated surface
journal, November 1999

The Influence of the Si-H ₂ Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells
journal, October 1989