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Title: Additives to silane for thin film silicon photovoltaic devices

Abstract

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Inventors:
; ; ;
Issue Date:
Research Org.:
Air Products and Chemicals, Inc. (Allentown, PA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1093446
Patent Number(s):
8535760
Application Number:
12/872,806
Assignee:
Air Products and Chemicals, Inc. (Allentown, PA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0000580
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, and Langan, John Giles. Additives to silane for thin film silicon photovoltaic devices. United States: N. p., 2013. Web.
Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, & Langan, John Giles. Additives to silane for thin film silicon photovoltaic devices. United States.
Hurley, Patrick Timothy, Ridgeway, Robert Gordon, Hutchison, Katherine Anne, and Langan, John Giles. Tue . "Additives to silane for thin film silicon photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1093446.
@article{osti_1093446,
title = {Additives to silane for thin film silicon photovoltaic devices},
author = {Hurley, Patrick Timothy and Ridgeway, Robert Gordon and Hutchison, Katherine Anne and Langan, John Giles},
abstractNote = {Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {9}
}

Works referenced in this record:

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Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
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journal, October 2000


Exploration of the deposition limits of microcrystalline silicon
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Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane
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Amorphous silicon solar cell
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conference, January 2000

  • Nishimoto, T.; Takai, M.; Kondo, M.
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  • https://doi.org/10.1109/PVSC.2000.916023

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