Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

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Abstract

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Inventors:: Lagally, Max G; Evans, Paul G; Ritz, Clark S

Issue Date:: 2013-09-17

Research Org.:: Wisconsin Alumni Research Foundation (Madison, WI)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1093435

Patent Number(s):: 8536440

Application Number:: 12/986,277

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S977/70 - Nanostructure

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/22 - comprising compounds containing boron, carbon, oxygen or nitrogen {or germanium or silicon, e.g. superconductors}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/34 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L29/127 - {Quantum box structures}
H01L35/32 - characterised by the structure or configuration of the cell or thermo-couple forming the device {including details about, e.g., housing, insulation, geometry, module}
H01L29/0665 - {the shape of the body defining a nanostructure

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/26 - using compositions changing continuously or discontinuously inside the material
H01L29/0673 - {oriented parallel to a substrate}

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DOE Contract Number:: FG02-03ER46028

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States: N. p., 2013. 
        Web.

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                    Lagally, Max G, Evans, Paul G, & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States.

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                    Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Tue .  
        "Semiconductor nanowire thermoelectric materials and devices, and processes for producing same".  United States.  https://www.osti.gov/servlets/purl/1093435.

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@article{osti_1093435,

  title        = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},

  author       = {Lagally, Max G and Evans, Paul G and Ritz, Clark S},

  abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {9}

}

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