Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
Abstract
The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."
- Inventors:
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1093435
- Patent Number(s):
- 8536440
- Application Number:
- 12/986,277
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-03ER46028
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States: N. p., 2013.
Web.
Lagally, Max G, Evans, Paul G, & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States.
Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Tue .
"Semiconductor nanowire thermoelectric materials and devices, and processes for producing same". United States. https://www.osti.gov/servlets/purl/1093435.
@article{osti_1093435,
title = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},
author = {Lagally, Max G and Evans, Paul G and Ritz, Clark S},
abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {9}
}
Works referenced in this record:
Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices
journal, March 2002
- Huxtable, Scott T.; Abramson, Alexis R.; Tien, Chang-Lin
- Applied Physics Letters, Vol. 80, Issue 10
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
patent-application, November 2002
- Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.
- US Patent Document 10/112698; 20020172820