Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Lagally, Max G; Evans, Paul G; Ritz, Clark S

Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Abstract

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Inventors:: Lagally, Max G; Evans, Paul G; Ritz, Clark S

Issue Date:: 2013-09-17

Research Org.:: Wisconsin Alumni Research Foundation (Madison, WI)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1093435

Patent Number(s):: 8536440

Application Number:: 12/986,277

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S977/70 - Nanostructure

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/22 - comprising compounds containing boron, carbon, oxygen or nitrogen {or germanium or silicon, e.g. superconductors}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/34 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L29/127 - {Quantum box structures}
H01L35/32 - characterised by the structure or configuration of the cell or thermo-couple forming the device {including details about, e.g., housing, insulation, geometry, module}
H01L29/0665 - {the shape of the body defining a nanostructure

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/26 - using compositions changing continuously or discontinuously inside the material
H01L29/0673 - {oriented parallel to a substrate}

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DOE Contract Number:: FG02-03ER46028

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States: N. p., 2013. 
        Web.

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                    Lagally, Max G, Evans, Paul G, & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same.  United States.

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                    Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Tue .  
        "Semiconductor nanowire thermoelectric materials and devices, and processes for producing same".  United States.  https://www.osti.gov/servlets/purl/1093435.

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@article{osti_1093435,

  title        = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},

  author       = {Lagally, Max G and Evans, Paul G and Ritz, Clark S},

  abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {9}

}

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Works referenced in this record:

Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices
journal, March 2002

Huxtable, Scott T.; Abramson, Alexis R.; Tien, Chang-Lin
Applied Physics Letters, Vol. 80, Issue 10
https://doi.org/10.1063/1.1455693

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Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

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Citation Formats

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices
journal, March 2002