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Title: Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates

Abstract

In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.

Inventors:
;
Issue Date:
Research Org.:
Georgia Tech Research Corporation (Atlanta, GA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1093357
Patent Number(s):
8,518,736
Application Number:
12/980,666
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
DOE Contract Number:  
FG02-07ER46394
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Zhong L, and Xu, Sheng. Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates. United States: N. p., 2013. Web.
Wang, Zhong L, & Xu, Sheng. Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates. United States.
Wang, Zhong L, and Xu, Sheng. Tue . "Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates". United States. https://www.osti.gov/servlets/purl/1093357.
@article{osti_1093357,
title = {Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates},
author = {Wang, Zhong L and Xu, Sheng},
abstractNote = {In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}

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