Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

Norman, Andrew G; Ptak, Aaron J

Title: Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

Abstract

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Inventors:: Norman, Andrew G; Ptak, Aaron J

Issue Date:: 2013-08-13

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1092976

Patent Number(s):: 8507365

Application Number:: 12/643,127

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0237 - {Materials}
H01L21/02373 - {Group 14 semiconducting materials}
H01L21/0242 - {Crystalline insulating materials}
H01L21/02433 - {Crystal orientation}
H01L21/02521 - {Materials}
H01L21/0254 - {Nitrides}
H01L21/02609 - {Crystal orientation}
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/0725 - Multiple junction or tandem solar cells
H01L33/16 - with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L33/32 - containing nitrogen

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Norman, Andrew G, and Ptak, Aaron J. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates.  United States: N. p., 2013. 
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                    Norman, Andrew G, & Ptak, Aaron J. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates.  United States.

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                    Norman, Andrew G, and Ptak, Aaron J. Tue .  
        "Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates".  United States.  https://www.osti.gov/servlets/purl/1092976.

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@article{osti_1092976,

  title        = {Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates},

  author       = {Norman, Andrew G and Ptak, Aaron J},

  abstractNote = {Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {8}

}

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journal, January 1996

George, T.; Jacobsohn, E.; Pike, W. T.
Applied Physics Letters, Vol. 68, Issue 3
https://doi.org/10.1063/1.116708

Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate
journal, May 2006

Pacheco-Salazar, D. G.; Leite, J. R.; Cerdeira, F.
Semiconductor Science and Technology, Vol. 21, Issue 7
https://doi.org/10.1088/0268-1242/21/7/003

Cubic-on-cubic growth of a MgO(001) thin film prepared on Si(001) substrate at low ambient pressure by the sputtering method
journal, January 2008

Kaneko, S.; Funakubo, H.; Kadowaki, T.
EPL (Europhysics Letters), Vol. 81, Issue 4
https://doi.org/10.1209/0295-5075/81/46001

Epitaxial YBa2Cu3O7 on Biaxially Textured Nickel (001): An Approach to Superconducting Tapes with High Critical Current Density
journal, November 1996

Norton, D. P.; Goyal, A.; Budai, J. D.
Science, Vol. 274, Issue 5288
https://doi.org/10.1126/science.274.5288.755

Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
patent, February 2003

Narayan, Jagdish; Sharma, Ajay; Muth, John
US Patent Document 6,518,077
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6518077

Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates
journal, May 2001

Yamada, K.; Asahi, H.; Tampo, H.
Applied Physics Letters, Vol. 78, Issue 19
https://doi.org/10.1063/1.1371528

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007

King, R. R.; Law, D. C.; Edmondson, K. M.
Applied Physics Letters, Vol. 90, Issue 18
https://doi.org/10.1063/1.2734507

Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
patent, October 2006

Narayanan, Authi A.; Schwartz, Joel
US Patent Document 7,122,733
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7122733

Group-III nitride based light emitter
patent, August 1998

Ohuchi, Youichiro; Okagawa, Hiroaki; Watabe, Shinichi
US Patent Document 5,793,061
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5793061

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
journal, April 2003

Tolle, J.; Roucka, R.; Tsong, I. S. T.
Applied Physics Letters, Vol. 82, Issue 15
https://doi.org/10.1063/1.1566099

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Title: Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

Abstract

Citation Formats

Thin film poly III–V space solar cells conference, May 2008

Low cost, single crystal-like substrates for practical, high efficiency solar cells conference, January 1997

Nitride semiconductor light emitting element and optical device containing it patent, March 2006

Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl 2 O 4 Substrates by Pulsed-Laser Deposition journal, April 2006

High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same patent, October 2005

Properties of epitaxial GaN on refractory metal substrates journal, February 2007

Epitaxy of Dissimilar Materials journal, August 1995

Zymomonas pentose-sugar fermenting strains and uses thereof patent-application, August 2003

Nucleation and growth of epitaxial ZrB2(0001) on Si(111) journal, July 2004

Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges journal, April 2006

Method for rapid, controllable growth and thickness, of epitaxial silicon films patent, October 2009

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge patent, August 2001

Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry journal, November 2001

Epitaxial growth of AlN films on single-crystalline Ta substrates journal, August 2007

Magnetic particle-based therapy patent-application, February 2006

Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions journal, April 2007

Growth of InN films on spinel substrates by pulsed laser deposition journal, October 2007

Domain epitaxy: A unified paradigm for thin film growth journal, January 2003

Photonic biasing and integrated solar charging networks for integrated circuits patent-application, January 2003

Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells patent-application, March 2009

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate journal, October 1998

Rare Earth Elements—Critical Resources for High Technology report, November 2002

High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction journal, July 2007

Epitaxial growth of GaAs/NiAl/GaAs heterostructures journal, April 1988

General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV) journal, May 2002

The growth of epitaxial aluminium on As containing compound semiconductors journal, January 1999

Epitaxial growth of single-crystalline AlN films on tungsten substrates journal, December 2006

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100) journal, October 2000

Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy journal, December 1988

Nitride-based semiconductor element and method of forming nitride-based semiconductor patent, July 2004

On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate journal, March 2000

Technique for the growth of planar semi-polar gallium nitride patent, May 2007

Method for producing multijunction solar cell patent, November 2009

Miniature self-pumped monolithically integrated solid state laser patent, August 1998

Growth and properties of GaN and AlN layers on silver substrates journal, November 2005

Material considerations for terawatt level deployment of photovoltaics journal, February 2008

Transmission electron microscope study on electrodeposited Gd2O3 and Gd2Zr2O7 buffer layers for YBa2Cu3O7−δ superconductors journal, July 2008

Band parameters for nitrogen-containing semiconductors journal, September 2003

Method of treating lignocellulose materials to produce ruminant feed patent, January 1979

Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates journal, August 2002

MBE growth of GaN on MgO substrate journal, April 2007

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy journal, May 1991

Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs journal, June 1978

Lattice-matched HfN buffer layers for epitaxy of GaN on Si journal, August 2002

InGaN‐GaN based light‐emitting diodes over (111) spinel substrates journal, July 1996

Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates journal, July 2005

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells journal, February 2007

Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures journal, April 1990

Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates journal, January 2008

Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates journal, December 2000

Spinel substrate and heteroepitaxial growth of III-V materials thereon patent, January 2005

[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices patent-application, September 2008

Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation journal, March 2002

New frontiers in thin film growth and nanomaterials journal, February 2005

Bowing parameter of zincblende InxGa1−xN journal, December 2007

Group-III nitride semiconductor light-emitting device and production method thereof patent, May 2007

Light emitting apparatus and method of manufacturing the same patent, June 2008

The Promise and Challenge of Solid-State Lighting journal, December 2001

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions journal, September 2008

The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors journal, August 2004

Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition journal, April 2006

GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy journal, February 2009

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates journal, May 1998

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4 journal, January 2006

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates journal, October 1996

Epitaxial growth of GaN on copper substrates journal, June 2006

Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures journal, January 1999

Bipolar transistor, semiconductor light emitting device and semiconductor device patent, December 2002

Suppression of domain formation in GaN layers grown on Ge(111) journal, February 2009

Increasing cube texture in high purity aluminium foils for capacitors journal, December 2005

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes journal, December 2005

Growth and characterization of GaAs/Al/GaAs heterostructures journal, April 1990

Research challenges to ultra-efficient inorganic solid-state lighting journal, December 2007

Light Emitting Device patent-application, February 2009

Morphological and chemical considerations for the epitaxy of metals on semiconductors journal, January 1984

Metal-oxide interfaces at the nanoscale journal, June 2009

III N V semiconductors for solar photovoltaic applications journal, July 2002

Thin film poly III–V space solar cells
conference, May 2008

Low cost, single crystal-like substrates for practical, high efficiency solar cells
conference, January 1997

Nitride semiconductor light emitting element and optical device containing it
patent, March 2006

Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl ₂ O ₄ Substrates by Pulsed-Laser Deposition
journal, April 2006

High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
patent, October 2005

Properties of epitaxial GaN on refractory metal substrates
journal, February 2007

Epitaxy of Dissimilar Materials
journal, August 1995

Zymomonas pentose-sugar fermenting strains and uses thereof
patent-application, August 2003

Nucleation and growth of epitaxial ZrB₂(0001) on Si(111)
journal, July 2004

Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges
journal, April 2006

Method for rapid, controllable growth and thickness, of epitaxial silicon films
patent, October 2009

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
patent, August 2001

Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry
journal, November 2001

Epitaxial growth of AlN films on single-crystalline Ta substrates
journal, August 2007

Magnetic particle-based therapy
patent-application, February 2006

Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions
journal, April 2007

Growth of InN films on spinel substrates by pulsed laser deposition
journal, October 2007

Domain epitaxy: A unified paradigm for thin film growth
journal, January 2003

Photonic biasing and integrated solar charging networks for integrated circuits
patent-application, January 2003

Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
patent-application, March 2009

Microstructure evolution of GaN buffer layer on MgAl₂O₄ substrate
journal, October 1998

Rare Earth Elements—Critical Resources for High Technology
report, November 2002

High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007

Epitaxial growth of GaAs/NiAl/GaAs heterostructures
journal, April 1988

General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)
journal, May 2002

The growth of epitaxial aluminium on As containing compound semiconductors
journal, January 1999

Epitaxial growth of single-crystalline AlN films on tungsten substrates
journal, December 2006

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)
journal, October 2000

Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy
journal, December 1988

Nitride-based semiconductor element and method of forming nitride-based semiconductor
patent, July 2004

On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
journal, March 2000

Technique for the growth of planar semi-polar gallium nitride
patent, May 2007

Method for producing multijunction solar cell
patent, November 2009

Miniature self-pumped monolithically integrated solid state laser
patent, August 1998

Growth and properties of GaN and AlN layers on silver substrates
journal, November 2005

Material considerations for terawatt level deployment of photovoltaics
journal, February 2008

Transmission electron microscope study on electrodeposited Gd₂O₃ and Gd₂Zr₂O₇ buffer layers for YBa₂Cu₃O_7−δ superconductors
journal, July 2008

Band parameters for nitrogen-containing semiconductors
journal, September 2003

Method of treating lignocellulose materials to produce ruminant feed
patent, January 1979

Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates
journal, August 2002

MBE growth of GaN on MgO substrate
journal, April 2007

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy
journal, May 1991

Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
journal, June 1978

Lattice-matched HfN buffer layers for epitaxy of GaN on Si
journal, August 2002

InGaN‐GaN based light‐emitting diodes over (111) spinel substrates
journal, July 1996

Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
journal, July 2005

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells
journal, February 2007

Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
journal, April 1990

Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates
journal, January 2008

Initial stages of InN thin film growth onto MgAl₂O₄(111) and α-Al₂O₃(00·1) substrates
journal, December 2000

Spinel substrate and heteroepitaxial growth of III-V materials thereon
patent, January 2005

[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
patent-application, September 2008

Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
journal, March 2002

New frontiers in thin film growth and nanomaterials
journal, February 2005

Bowing parameter of zincblende In_xGa_1−xN
journal, December 2007

Group-III nitride semiconductor light-emitting device and production method thereof
patent, May 2007

Light emitting apparatus and method of manufacturing the same
patent, June 2008

The Promise and Challenge of Solid-State Lighting
journal, December 2001

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008

The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors
journal, August 2004

Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition
journal, April 2006

GdN (111) heteroepitaxy on GaN (0001) by N₂ plasma and NH₃ molecular beam epitaxy
journal, February 2009

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
journal, May 1998

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe₂O₄
journal, January 2006

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
journal, October 1996

Epitaxial growth of GaN on copper substrates
journal, June 2006

Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures
journal, January 1999

Bipolar transistor, semiconductor light emitting device and semiconductor device
patent, December 2002

Suppression of domain formation in GaN layers grown on Ge(111)
journal, February 2009

Increasing cube texture in high purity aluminium foils for capacitors
journal, December 2005

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
journal, December 2005

Growth and characterization of GaAs/Al/GaAs heterostructures
journal, April 1990

Research challenges to ultra-efficient inorganic solid-state lighting
journal, December 2007

Light Emitting Device
patent-application, February 2009

Morphological and chemical considerations for the epitaxy of metals on semiconductors
journal, January 1984

Metal-oxide interfaces at the nanoscale
journal, June 2009

III N V semiconductors for solar photovoltaic applications
journal, July 2002

Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
journal, March 1997

Epitaxial growth in large‐lattice‐mismatch systems
journal, January 1994

Bipolar transistor, semiconductor light emitting device and semiconductor device
patent, August 2003