Lithographic dry development using optical absorption
Abstract
A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1092754
- Patent Number(s):
- 8512937
- Application Number:
- 13/039,139
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Lithographic dry development using optical absorption. United States: N. p., 2013.
Web.
Olynick, Deirdre, Schuck, P. James, & Schmidt, Martin. Lithographic dry development using optical absorption. United States.
Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Tue .
"Lithographic dry development using optical absorption". United States. https://www.osti.gov/servlets/purl/1092754.
@article{osti_1092754,
title = {Lithographic dry development using optical absorption},
author = {Olynick, Deirdre and Schuck, P. James and Schmidt, Martin},
abstractNote = {A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}
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Works referenced in this record:
Sub-20 nm laser ablation for lithographic dry development
journal, April 2012
- de Oteyza, D. G.; Perera, P. N.; Schmidt, M.
- Nanotechnology, Vol. 23, Issue 18
A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties
journal, August 2004
- Yoshimoto, K.; Stoykovich, M. P.; Cao, H. B.
- Journal of Applied Physics, Vol. 96, Issue 4
Site-Selective Doping of Dyes into Polystyrene- block -Poly(4-vinyl pyridine) Diblock Copolymer Films and Selective Laser Ablation of the Dye-Doped Films
journal, November 2007
- Wang, Zhixiang; Masuo, Sadahiro; Machida, Shinjiro
- Japanese Journal of Applied Physics, Vol. 46, Issue 11
Extreme ultraviolet lithography: A review
journal, January 2007
- Wu, Banqiu; Kumar, Ajay
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 6
Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
journal, December 1995
- Yamaguchi, Atsuko; Tachibana, Hiroaki; Oizumi, Hiroaki
- Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 12B
Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications.
journal, January 1998
- Vertommen, Johan; Klippert, Walter; Goethals, Anne-Marie
- Journal of Photopolymer Science and Technology, Vol. 11, Issue 4