skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Lithographic dry development using optical absorption

Abstract

A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Inventors:
; ;
Issue Date:
Research Org.:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1092754
Patent Number(s):
8,512,937
Application Number:
13/039,139
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Lithographic dry development using optical absorption. United States: N. p., 2013. Web.
Olynick, Deirdre, Schuck, P. James, & Schmidt, Martin. Lithographic dry development using optical absorption. United States.
Olynick, Deirdre, Schuck, P. James, and Schmidt, Martin. Tue . "Lithographic dry development using optical absorption". United States. https://www.osti.gov/servlets/purl/1092754.
@article{osti_1092754,
title = {Lithographic dry development using optical absorption},
author = {Olynick, Deirdre and Schuck, P. James and Schmidt, Martin},
abstractNote = {A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}

Patent:

Save / Share: