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Title: Method of manufacture of atomically thin boron nitride

Abstract

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

Inventors:
Issue Date:
Research Org.:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1089414
Patent Number(s):
8,501,024
Application Number:
12/895,624
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zettl, Alexander K. Method of manufacture of atomically thin boron nitride. United States: N. p., 2013. Web.
Zettl, Alexander K. Method of manufacture of atomically thin boron nitride. United States.
Zettl, Alexander K. Tue . "Method of manufacture of atomically thin boron nitride". United States. https://www.osti.gov/servlets/purl/1089414.
@article{osti_1089414,
title = {Method of manufacture of atomically thin boron nitride},
author = {Zettl, Alexander K},
abstractNote = {The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}

Patent:

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