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Title: Diamond nucleation using polyethene

Abstract

The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Inventors:
; ; ;
Issue Date:
Research Org.:
University of Puerto Rico (San Juan, PR)
Sponsoring Org.:
USDOE
OSTI Identifier:
1088693
Patent Number(s):
8491964
Application Number:
13/070,214
Assignee:
University of Puerto Rico (San Juan, PR)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
FG02-08ER46526
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Morell, Gerardo, Makarov, Vladimir, Varshney, Deepak, and Weiner, Brad. Diamond nucleation using polyethene. United States: N. p., 2013. Web.
Morell, Gerardo, Makarov, Vladimir, Varshney, Deepak, & Weiner, Brad. Diamond nucleation using polyethene. United States.
Morell, Gerardo, Makarov, Vladimir, Varshney, Deepak, and Weiner, Brad. Tue . "Diamond nucleation using polyethene". United States. https://www.osti.gov/servlets/purl/1088693.
@article{osti_1088693,
title = {Diamond nucleation using polyethene},
author = {Morell, Gerardo and Makarov, Vladimir and Varshney, Deepak and Weiner, Brad},
abstractNote = {The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {7}
}

Works referenced in this record:

Nucleation and growth of diamond on silicon substrate coated with polymer
journal, June 1999