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Title: Methods for making thin layers of crystalline materials

Abstract

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Inventors:
; ;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1088688
Patent Number(s):
8492245
Application Number:
13/367,600
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G, Paskiewicz, Deborah M, and Tanto, Boy. Methods for making thin layers of crystalline materials. United States: N. p., 2013. Web.
Lagally, Max G, Paskiewicz, Deborah M, & Tanto, Boy. Methods for making thin layers of crystalline materials. United States.
Lagally, Max G, Paskiewicz, Deborah M, and Tanto, Boy. Tue . "Methods for making thin layers of crystalline materials". United States. https://www.osti.gov/servlets/purl/1088688.
@article{osti_1088688,
title = {Methods for making thin layers of crystalline materials},
author = {Lagally, Max G and Paskiewicz, Deborah M and Tanto, Boy},
abstractNote = {Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {7}
}

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