Method for reuse of wafers for growth of vertically-aligned wire arrays
Abstract
Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
- Inventors:
- Issue Date:
- Research Org.:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1084359
- Patent Number(s):
- 8455333
- Application Number:
- 13/550,395
- Assignee:
- California Institute of Technology (Pasadena, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- FG02-03ER15483
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Spurgeon, Joshua M, Plass, Katherine E, Lewis, Nathan S, and Atwater, Harry A. Method for reuse of wafers for growth of vertically-aligned wire arrays. United States: N. p., 2013.
Web.
Spurgeon, Joshua M, Plass, Katherine E, Lewis, Nathan S, & Atwater, Harry A. Method for reuse of wafers for growth of vertically-aligned wire arrays. United States.
Spurgeon, Joshua M, Plass, Katherine E, Lewis, Nathan S, and Atwater, Harry A. Tue .
"Method for reuse of wafers for growth of vertically-aligned wire arrays". United States. https://www.osti.gov/servlets/purl/1084359.
@article{osti_1084359,
title = {Method for reuse of wafers for growth of vertically-aligned wire arrays},
author = {Spurgeon, Joshua M and Plass, Katherine E and Lewis, Nathan S and Atwater, Harry A},
abstractNote = {Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {6}
}
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