Laser pumping of thyristors for fast high current rise-times
Abstract
An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.
- Inventors:
- Issue Date:
- Research Org.:
- Applied Pulsed Power, Inc. (Freeville, NY)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1084214
- Patent Number(s):
- 8461620
- Application Number:
- 13/111,170
- Assignee:
- Applied Pulsed Power, Inc. (Freeville, NY)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-08ER85188
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Glidden, Steven C., and Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States: N. p., 2013.
Web.
Glidden, Steven C., & Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States.
Glidden, Steven C., and Sanders, Howard D. Tue .
"Laser pumping of thyristors for fast high current rise-times". United States. https://www.osti.gov/servlets/purl/1084214.
@article{osti_1084214,
title = {Laser pumping of thyristors for fast high current rise-times},
author = {Glidden, Steven C. and Sanders, Howard D.},
abstractNote = {An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 11 00:00:00 EDT 2013},
month = {Tue Jun 11 00:00:00 EDT 2013}
}
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