Methods of forming semiconductor devices and devices formed using such methods
Abstract
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
- Inventors:
- Issue Date:
- Research Org.:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083982
- Patent Number(s):
- 8445388
- Application Number:
- 13/099,043
- Assignee:
- Battelle Energy Alliance, LLC (Idaho Falls, ID)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC07-05ID14517
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Methods of forming semiconductor devices and devices formed using such methods. United States: N. p., 2013.
Web.
Fox, Robert V, Rodriguez, Rene G, & Pak, Joshua. Methods of forming semiconductor devices and devices formed using such methods. United States.
Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Tue .
"Methods of forming semiconductor devices and devices formed using such methods". United States. https://www.osti.gov/servlets/purl/1083982.
@article{osti_1083982,
title = {Methods of forming semiconductor devices and devices formed using such methods},
author = {Fox, Robert V and Rodriguez, Rene G and Pak, Joshua},
abstractNote = {Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {5}
}
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