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Title: Methods of forming semiconductor devices and devices formed using such methods

Abstract

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Inventors:
; ;
Issue Date:
Research Org.:
INL (Idaho National Laboratory (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083982
Patent Number(s):
8,445,388
Application Number:
13/099,043
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Methods of forming semiconductor devices and devices formed using such methods. United States: N. p., 2013. Web.
Fox, Robert V, Rodriguez, Rene G, & Pak, Joshua. Methods of forming semiconductor devices and devices formed using such methods. United States.
Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Tue . "Methods of forming semiconductor devices and devices formed using such methods". United States. https://www.osti.gov/servlets/purl/1083982.
@article{osti_1083982,
title = {Methods of forming semiconductor devices and devices formed using such methods},
author = {Fox, Robert V and Rodriguez, Rene G and Pak, Joshua},
abstractNote = {Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {5}
}

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