Phonon-enhanced crystal growth and lattice healing

Buonassisi, Anthony; Bertoni, Mariana; Newman, Bonna

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Title: Phonon-enhanced crystal growth and lattice healing

Abstract

A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.

Inventors:: Buonassisi, Anthony; Bertoni, Mariana; Newman, Bonna

Issue Date:: Tue May 28 00:00:00 EDT 2013

Research Org.:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1083902

Patent Number(s):: 8450704

Application Number:: 12/959,795

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B30/06 - using mechanical vibrations

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1824 - {Special manufacturing methods for microcrystalline Si, uc-Si}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/545 - Microcrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: FG36-09GO19001

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Buonassisi, Anthony, Bertoni, Mariana, and Newman, Bonna. Phonon-enhanced crystal growth and lattice healing.  United States: N. p., 2013. 
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                    Buonassisi, Anthony, Bertoni, Mariana, & Newman, Bonna. Phonon-enhanced crystal growth and lattice healing.  United States.

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                    Buonassisi, Anthony, Bertoni, Mariana, and Newman, Bonna. Tue .  
        "Phonon-enhanced crystal growth and lattice healing".  United States.  https://www.osti.gov/servlets/purl/1083902.

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@article{osti_1083902,

  title        = {Phonon-enhanced crystal growth and lattice healing},

  author       = {Buonassisi, Anthony and Bertoni, Mariana and Newman, Bonna},

  abstractNote = {A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue May 28 00:00:00 EDT 2013},

  month        = {Tue May 28 00:00:00 EDT 2013}

}

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Works referenced in this record:

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patent, March 2008

Lan, Chune-Wen; Yu, Wan-Chin
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Utilizing vibration to promote microstructural homogeneity during floating-zone crystal growth processing
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Phonon resonator and method for its production
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Brown, Thomas
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Source material feeder apparatus for industrial crystal growth systems
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Fickett, Bryan; Bushman, Robert
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Dislocation Interactions with Phonons in Sodium Chloride in the Temperature Range 70-300°K
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Physical Review B, Vol. 6, Issue 10
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The mechanism of Landau-Rumer relaxation of thermal and high-frequency phonons in cubic crystals of germanium, silicon, and diamond
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Kuleev, I. G.; Kuleev, I. I.
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Wavelet analysis for laser ultrasonic measurement of material properties
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Reich, Judith; Kotidis, Petros
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New Aspects of Crystal Growth of Solid ⁴ He Studied by Acoustic Wave
journal, November 2008

Okuda, Yuichi; Nomura, Ryuji
Journal of the Physical Society of Japan, Vol. 77, Issue 11
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Method for forming single crystals of silicon by use of a standing hypersonic wave
patent, May 1987

Ostriker, Jeremiah P.
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Ultra high resolution wave focusing method and apparatus and systems employing such method and apparatus
patent, February 2000

Deliwala, Shrenik; Flusberg, Allen M.
US Patent Document 6,020,988
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Method for growing a silicon single crystal
patent, July 2000

Kawanishi, Souroku; Yamamoto, Youichi
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Decay of high-frequency phonons in amorphous silicon
journal, February 1996

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conference, January 1998

Sheinkman, M. K.; Korsunskaya, N. E.; Ostapenko, S. S.
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Similar Records

Title: Phonon-enhanced crystal growth and lattice healing

Abstract

Citation Formats

Rotationally-vibrated unidirectional solidification crystal growth system and its method patent, March 2008

Utilizing vibration to promote microstructural homogeneity during floating-zone crystal growth processing journal, August 1996

Phonon resonator and method for its production patent, June 1999

Source material feeder apparatus for industrial crystal growth systems patent, May 2005

Dislocation Interactions with Phonons in Sodium Chloride in the Temperature Range 70-300°K journal, November 1972

The mechanism of Landau-Rumer relaxation of thermal and high-frequency phonons in cubic crystals of germanium, silicon, and diamond journal, July 2004

Wavelet analysis for laser ultrasonic measurement of material properties patent, March 1998

New Aspects of Crystal Growth of Solid 4 He Studied by Acoustic Wave journal, November 2008

Method for forming single crystals of silicon by use of a standing hypersonic wave patent, May 1987

Ultra high resolution wave focusing method and apparatus and systems employing such method and apparatus patent, February 2000

Method for growing a silicon single crystal patent, July 2000

Decay of high-frequency phonons in amorphous silicon journal, February 1996

Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices conference, January 1998

Method of treatment of devices based on semiconductor and dielectric materials patent, December 1999

Homodyne interferometer and method of sensing material patent, May 1999

Method for the production of multi-crystalline semiconductor material patent, January 2003

Rotationally-vibrated unidirectional solidification crystal growth system and its method
patent, March 2008

Utilizing vibration to promote microstructural homogeneity during floating-zone crystal growth processing
journal, August 1996

Phonon resonator and method for its production
patent, June 1999

Source material feeder apparatus for industrial crystal growth systems
patent, May 2005

Dislocation Interactions with Phonons in Sodium Chloride in the Temperature Range 70-300°K
journal, November 1972

The mechanism of Landau-Rumer relaxation of thermal and high-frequency phonons in cubic crystals of germanium, silicon, and diamond
journal, July 2004

Wavelet analysis for laser ultrasonic measurement of material properties
patent, March 1998

New Aspects of Crystal Growth of Solid ⁴ He Studied by Acoustic Wave
journal, November 2008

Method for forming single crystals of silicon by use of a standing hypersonic wave
patent, May 1987

Ultra high resolution wave focusing method and apparatus and systems employing such method and apparatus
patent, February 2000

Method for growing a silicon single crystal
patent, July 2000

Decay of high-frequency phonons in amorphous silicon
journal, February 1996

Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices
conference, January 1998

Method of treatment of devices based on semiconductor and dielectric materials
patent, December 1999

Homodyne interferometer and method of sensing material
patent, May 1999

Method for the production of multi-crystalline semiconductor material
patent, January 2003