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Title: Strain-compensated infrared photodetector and photodetector array

Abstract

A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083800
Patent Number(s):
8450773
Application Number:
12/836,769
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Kim, Jin K, Hawkins, Samuel D, Klem, John F, and Cich, Michael J. Strain-compensated infrared photodetector and photodetector array. United States: N. p., 2013. Web.
Kim, Jin K, Hawkins, Samuel D, Klem, John F, & Cich, Michael J. Strain-compensated infrared photodetector and photodetector array. United States.
Kim, Jin K, Hawkins, Samuel D, Klem, John F, and Cich, Michael J. Tue . "Strain-compensated infrared photodetector and photodetector array". United States. https://www.osti.gov/servlets/purl/1083800.
@article{osti_1083800,
title = {Strain-compensated infrared photodetector and photodetector array},
author = {Kim, Jin K and Hawkins, Samuel D and Klem, John F and Cich, Michael J},
abstractNote = {A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {5}
}

Works referenced in this record:

Infrared detector epitaxial designs for suppression of surface leakage current
conference, January 2010


Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers
journal, May 2010

  • Savich, G. R.; Pedrazzani, J. R.; Maimon, S.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3
  • https://doi.org/10.1116/1.3276513

nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006