Strain-compensated infrared photodetector and photodetector array
Abstract
A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083800
- Patent Number(s):
- 8450773
- Application Number:
- 12/836,769
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Kim, Jin K, Hawkins, Samuel D, Klem, John F, and Cich, Michael J. Strain-compensated infrared photodetector and photodetector array. United States: N. p., 2013.
Web.
Kim, Jin K, Hawkins, Samuel D, Klem, John F, & Cich, Michael J. Strain-compensated infrared photodetector and photodetector array. United States.
Kim, Jin K, Hawkins, Samuel D, Klem, John F, and Cich, Michael J. Tue .
"Strain-compensated infrared photodetector and photodetector array". United States. https://www.osti.gov/servlets/purl/1083800.
@article{osti_1083800,
title = {Strain-compensated infrared photodetector and photodetector array},
author = {Kim, Jin K and Hawkins, Samuel D and Klem, John F and Cich, Michael J},
abstractNote = {A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {5}
}
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