High efficiency III-nitride light-emitting diodes
Abstract
Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083794
- Patent Number(s):
- 8451877
- Application Number:
- 13/050,673
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 73 NUCLEAR PHYSICS AND RADIATION PHYSICS
Citation Formats
Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. High efficiency III-nitride light-emitting diodes. United States: N. p., 2013.
Web.
Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, & Schubert, E. Fred. High efficiency III-nitride light-emitting diodes. United States.
Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. Tue .
"High efficiency III-nitride light-emitting diodes". United States. https://www.osti.gov/servlets/purl/1083794.
@article{osti_1083794,
title = {High efficiency III-nitride light-emitting diodes},
author = {Crawford, Mary and Koleske, Daniel and Cho, Jaehee and Zhu, Di and Noemaun, Ahmed and Schubert, Martin F and Schubert, E. Fred},
abstractNote = {Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 28 00:00:00 EDT 2013},
month = {Tue May 28 00:00:00 EDT 2013}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
journal, December 2007
- Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu
- Applied Physics Letters, Vol. 91, Issue 23
Auger recombination in InGaN measured by photoluminescence
journal, October 2007
- Shen, Y. C.; Mueller, G. O.; Watanabe, S.
- Applied Physics Letters, Vol. 91, Issue 14
Energy relaxation by hot electrons in n-GaN epilayers
journal, January 2001
- Stanton, N. M.; Kent, A. J.; Akimov, A. V.
- Journal of Applied Physics, Vol. 89, Issue 2
Light-emitting semiconductor device using group III nitride compound
patent, September 2001
- Koike, Masayoshi; Asami, Shinya
- US Patent Document 6,288,416
Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
journal, January 2007
- Rozhansky, I. V.; Zakheim, D. A.
- physica status solidi (a), Vol. 204, Issue 1
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
journal, September 2008
- Xie, Jinqiao; Ni, Xianfeng; Fan, Qian
- Applied Physics Letters, Vol. 93, Issue 12
Green ThinGaN power-LED demonstrates 100 lm
journal, May 2008
- Peter, M.; Laubsch, A.; Stauss, P.
- physica status solidi (c), Vol. 5, Issue 6
On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
journal, January 2011
- Dai, Qi; Shan, Qifeng; Cho, Jaehee
- Applied Physics Letters, Vol. 98, Issue 3
Hot electron relaxation time in GaN
journal, February 1999
- Ye, Hong; Wicks, G. W.; Fauchet, P. M.
- Applied Physics Letters, Vol. 74, Issue 5
Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
journal, March 2010
- Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee
- Applied Physics Letters, Vol. 96, Issue 12
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
journal, April 2003
- Pope, I. A.; Smowton, P. M.; Blood, P.
- Applied Physics Letters, Vol. 82, Issue 17
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
journal, February 2009
- Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.
- Applied Physics Letters, Vol. 94, Issue 8
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008
- David, Aurélien; Grundmann, Michael J.; Kaeding, John F.
- Applied Physics Letters, Vol. 92, Issue 5
Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008
- Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu
- Applied Physics Letters, Vol. 93, Issue 4
Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis
conference, September 2010
- David, A.; Grundmann, M. J.
- 2010 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Optical and structural studies in InGaN quantum well structure laser diodes
journal, January 2001
- Chichibu, Shigefusa F.; Azuhata, Takashi; Sugiyama, Mutsumi
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 6
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
journal, January 2009
- Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N.
- Applied Physics Letters, Vol. 94, Issue 1
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
journal, May 2006
- Efremov, A. A.; Bochkareva, N. I.; Gorbunov, R. I.
- Semiconductors, Vol. 40, Issue 5
n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down
journal, September 2008
- Reed, M. L.; Readinger, E. D.; Shen, H.
- Applied Physics Letters, Vol. 93, Issue 13
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007
- Gardner, N. F.; Müller, G. O.; Shen, Y. C.
- Applied Physics Letters, Vol. 91, Issue 24
Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007
- Kim, Min-Ho; Schubert, Martin F.; Dai, Qi
- Applied Physics Letters, Vol. 91, Issue 18