High efficiency III-nitride light-emitting diodes

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

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Title: High efficiency III-nitride light-emitting diodes

Abstract

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Inventors:: Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

Issue Date:: 2013-05-28

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1083794

Patent Number(s):: 8451877

Application Number:: 13/050,673

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/025 - {Physical imperfections, e.g. particular concentration or distribution of impurities}
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/18308 - {having a special structure for lateral current or light confinement}
H01S5/2018 - {Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers}
H01S5/309 - {doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
H01S5/3413 - {comprising partially disordered wells or barriers}
H01S5/34333 - {with a well layer based on Ga

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats


                    Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. High efficiency III-nitride light-emitting diodes.  United States: N. p., 2013. 
        Web.

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                    Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, & Schubert, E. Fred. High efficiency III-nitride light-emitting diodes.  United States.

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                    Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. Tue .  
        "High efficiency III-nitride light-emitting diodes".  United States.  https://www.osti.gov/servlets/purl/1083794.

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@article{osti_1083794,

  title        = {High efficiency III-nitride light-emitting diodes},

  author       = {Crawford, Mary and Koleske, Daniel and Cho, Jaehee and Zhu, Di and Noemaun, Ahmed and Schubert, Martin F and Schubert, E. Fred},

  abstractNote = {Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {5}

}

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Works referenced in this record:

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
journal, December 2007

Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu
Applied Physics Letters, Vol. 91, Issue 23
https://doi.org/10.1063/1.2822442

Auger recombination in InGaN measured by photoluminescence
journal, October 2007

Shen, Y. C.; Mueller, G. O.; Watanabe, S.
Applied Physics Letters, Vol. 91, Issue 14
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Energy relaxation by hot electrons in n-GaN epilayers
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Stanton, N. M.; Kent, A. J.; Akimov, A. V.
Journal of Applied Physics, Vol. 89, Issue 2
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Light-emitting semiconductor device using group III nitride compound
patent, September 2001

Koike, Masayoshi; Asami, Shinya
US Patent Document 6,288,416
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Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
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physica status solidi (a), Vol. 204, Issue 1
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On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
journal, September 2008

Xie, Jinqiao; Ni, Xianfeng; Fan, Qian
Applied Physics Letters, Vol. 93, Issue 12
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Green ThinGaN power-LED demonstrates 100 lm
journal, May 2008

Peter, M.; Laubsch, A.; Stauss, P.
physica status solidi (c), Vol. 5, Issue 6
https://doi.org/10.1002/pssc.200778554

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
journal, January 2011

Dai, Qi; Shan, Qifeng; Cho, Jaehee
Applied Physics Letters, Vol. 98, Issue 3
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Hot electron relaxation time in GaN
journal, February 1999

Ye, Hong; Wicks, G. W.; Fauchet, P. M.
Applied Physics Letters, Vol. 74, Issue 5
https://doi.org/10.1063/1.122995

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
journal, March 2010

Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee
Applied Physics Letters, Vol. 96, Issue 12
https://doi.org/10.1063/1.3371812

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
journal, April 2003

Pope, I. A.; Smowton, P. M.; Blood, P.
Applied Physics Letters, Vol. 82, Issue 17
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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
journal, February 2009

Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.
Applied Physics Letters, Vol. 94, Issue 8
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Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
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David, Aurélien; Grundmann, Michael J.; Kaeding, John F.
Applied Physics Letters, Vol. 92, Issue 5
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Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008

Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu
Applied Physics Letters, Vol. 93, Issue 4
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Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis
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David, A.; Grundmann, M. J.
2010 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Optical and structural studies in InGaN quantum well structure laser diodes
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Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
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Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N.
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Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
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Similar Records

Title: High efficiency III-nitride light-emitting diodes

Abstract

Citation Formats

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes journal, December 2007

Auger recombination in InGaN measured by photoluminescence journal, October 2007

Energy relaxation by hot electrons in n-GaN epilayers journal, January 2001

Light-emitting semiconductor device using group III nitride compound patent, September 2001

Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping journal, January 2007

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers journal, September 2008

Green ThinGaN power-LED demonstrates 100 lm journal, May 2008

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms journal, January 2011

Hot electron relaxation time in GaN journal, February 1999

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping journal, March 2010

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm journal, April 2003

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes journal, February 2009

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes journal, February 2008

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop journal, July 2008

Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis conference, September 2010

Optical and structural studies in InGaN quantum well structure laser diodes journal, January 2001

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes journal, January 2009

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs journal, May 2006

n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down journal, September 2008

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 journal, December 2007

Origin of efficiency droop in GaN-based light-emitting diodes journal, October 2007

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
journal, December 2007

Auger recombination in InGaN measured by photoluminescence
journal, October 2007

Energy relaxation by hot electrons in n-GaN epilayers
journal, January 2001

Light-emitting semiconductor device using group III nitride compound
patent, September 2001

Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
journal, January 2007

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
journal, September 2008

Green ThinGaN power-LED demonstrates 100 lm
journal, May 2008

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
journal, January 2011

Hot electron relaxation time in GaN
journal, February 1999

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
journal, March 2010

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
journal, April 2003

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
journal, February 2009

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008

Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis
conference, September 2010

Optical and structural studies in InGaN quantum well structure laser diodes
journal, January 2001

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
journal, January 2009

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
journal, May 2006

n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down
journal, September 2008

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007

Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007