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Title: High efficiency III-nitride light-emitting diodes

Abstract

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083794
Patent Number(s):
8,451,877
Application Number:
13/050,673
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. High efficiency III-nitride light-emitting diodes. United States: N. p., 2013. Web.
Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, & Schubert, E. Fred. High efficiency III-nitride light-emitting diodes. United States.
Crawford, Mary, Koleske, Daniel, Cho, Jaehee, Zhu, Di, Noemaun, Ahmed, Schubert, Martin F, and Schubert, E. Fred. Tue . "High efficiency III-nitride light-emitting diodes". United States. https://www.osti.gov/servlets/purl/1083794.
@article{osti_1083794,
title = {High efficiency III-nitride light-emitting diodes},
author = {Crawford, Mary and Koleske, Daniel and Cho, Jaehee and Zhu, Di and Noemaun, Ahmed and Schubert, Martin F and Schubert, E. Fred},
abstractNote = {Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {5}
}

Patent:

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