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Title: Optoelectronic devices utilizing materials having enhanced electronic transitions

Abstract

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Inventors:
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083784
Patent Number(s):
8415758
Application Number:
13/032,076
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC51-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats

Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States: N. p., 2013. Web.
Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States.
Black, Marcie R. Tue . "Optoelectronic devices utilizing materials having enhanced electronic transitions". United States. https://www.osti.gov/servlets/purl/1083784.
@article{osti_1083784,
title = {Optoelectronic devices utilizing materials having enhanced electronic transitions},
author = {Black, Marcie R.},
abstractNote = {An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

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