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Title: Optoelectronic devices utilizing materials having enhanced electronic transitions

Abstract

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Inventors:
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083784
Patent Number(s):
8415758
Application Number:
13/032,076
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC51-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats

Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States: N. p., 2013. Web.
Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States.
Black, Marcie R. Tue . "Optoelectronic devices utilizing materials having enhanced electronic transitions". United States. https://www.osti.gov/servlets/purl/1083784.
@article{osti_1083784,
title = {Optoelectronic devices utilizing materials having enhanced electronic transitions},
author = {Black, Marcie R.},
abstractNote = {An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 09 00:00:00 EDT 2013},
month = {Tue Apr 09 00:00:00 EDT 2013}
}

Works referenced in this record:

Electronic band structure of high-index silicon nanowires
journal, October 2005


Polarization-sensitive optical phenomena in semiconducting and metallic nanowires
journal, September 2005


Intersubband transitions in bismuth nanowires
journal, December 2000


Transport properties of Bi nanowire arrays
journal, June 2000


Quantum Confinement and Electronic Properties of Silicon Nanowires
journal, June 2004


Intermediate band semiconductor photovoltaic solar cell
patent, September 2002


Strained quantum well photovoltaic energy converter
patent, December 1998


High efficiency inorganic nanorod-enhanced photovoltaic devices
patent-application, September 2006


Nanowire devices and methods of fabrication
patent-application, October 2003


Small-Diameter Silicon Nanowire Surfaces
journal, February 2003


Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997


Nanowire interconnection and nano-scale device applications
patent, December 2007


Nanowire light emitting device and method of fabricating the same
patent-application, October 2005


Aligned Single-Crystalline Si Nanowire Arrays for Photovoltaic Applications
journal, September 2005