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Title: Rapid thermal processing by stamping

Abstract

A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083459
Patent Number(s):
8389422
Application Number:
12/675,117
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99G010337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING

Citation Formats

Stradins, Pauls, and Wang, Qi. Rapid thermal processing by stamping. United States: N. p., 2013. Web.
Stradins, Pauls, & Wang, Qi. Rapid thermal processing by stamping. United States.
Stradins, Pauls, and Wang, Qi. Tue . "Rapid thermal processing by stamping". United States. https://www.osti.gov/servlets/purl/1083459.
@article{osti_1083459,
title = {Rapid thermal processing by stamping},
author = {Stradins, Pauls and Wang, Qi},
abstractNote = {A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {3}
}

Works referenced in this record:

Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition
journal, July 1993