Rapid thermal processing by stamping

Stradins, Pauls; Wang, Qi

Title: Rapid thermal processing by stamping

Abstract

A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.

Inventors:: Stradins, Pauls; Wang, Qi

Issue Date:: 2013-03-05

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1083459

Patent Number(s):: 8389422

Application Number:: 12/675,117

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49826 - Assembling or joining

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/67103 - {mainly by conduction}
H01L21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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DOE Contract Number:: AC36-99G010337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING

Citation Formats


                    Stradins, Pauls, and Wang, Qi. Rapid thermal processing by stamping.  United States: N. p., 2013. 
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                    Stradins, Pauls, & Wang, Qi. Rapid thermal processing by stamping.  United States.

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                    Stradins, Pauls, and Wang, Qi. Tue .  
        "Rapid thermal processing by stamping".  United States.  https://www.osti.gov/servlets/purl/1083459.

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@article{osti_1083459,

  title        = {Rapid thermal processing by stamping},

  author       = {Stradins, Pauls and Wang, Qi},

  abstractNote = {A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {3}

}

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Works referenced in this record:

Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition
journal, July 1993

Masaki, Y.; LeComber, P. G.; Fitzgerald, A. G.
Journal of Applied Physics, Vol. 74, Issue 1
https://doi.org/10.1063/1.354144

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Title: Rapid thermal processing by stamping

Abstract

Citation Formats

Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition journal, July 1993

Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition
journal, July 1993