Method to reduce dislocation density in silicon using stress
Abstract
A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083452
- Patent Number(s):
- 8389999
- Application Number:
- 12/892,370
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG36-09GO19001
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, and Vogl, Michelle. Method to reduce dislocation density in silicon using stress. United States: N. p., 2013.
Web.
Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, & Vogl, Michelle. Method to reduce dislocation density in silicon using stress. United States.
Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, and Vogl, Michelle. Tue .
"Method to reduce dislocation density in silicon using stress". United States. https://www.osti.gov/servlets/purl/1083452.
@article{osti_1083452,
title = {Method to reduce dislocation density in silicon using stress},
author = {Buonassisi, Anthony and Bertoni, Mariana and Argon, Ali and Castellanos, Sergio and Fecych, Alexandria and Powell, Douglas and Vogl, Michelle},
abstractNote = {A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 05 00:00:00 EST 2013},
month = {Tue Mar 05 00:00:00 EST 2013}
}
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Works referenced in this record:
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patent, April 1969
- Schmidt, Otto
- US Patent Document 3441385
Cyclic thermal anneal for dislocation reduction
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Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
patent, December 1986
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