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Title: Method to reduce dislocation density in silicon using stress

Abstract

A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083452
Patent Number(s):
8389999
Application Number:
12/892,370
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG36-09GO19001
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, and Vogl, Michelle. Method to reduce dislocation density in silicon using stress. United States: N. p., 2013. Web.
Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, & Vogl, Michelle. Method to reduce dislocation density in silicon using stress. United States.
Buonassisi, Anthony, Bertoni, Mariana, Argon, Ali, Castellanos, Sergio, Fecych, Alexandria, Powell, Douglas, and Vogl, Michelle. Tue . "Method to reduce dislocation density in silicon using stress". United States. https://www.osti.gov/servlets/purl/1083452.
@article{osti_1083452,
title = {Method to reduce dislocation density in silicon using stress},
author = {Buonassisi, Anthony and Bertoni, Mariana and Argon, Ali and Castellanos, Sergio and Fecych, Alexandria and Powell, Douglas and Vogl, Michelle},
abstractNote = {A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {3}
}

Works referenced in this record:

High-quality Ge epilayers on Si with low threading-dislocation densities
journal, November 1999