Title: Large-scale fabrication of vertically aligned ZnO nanowire arrays

Abstract

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Inventors:

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

Issue Date:

2013-02-05

Research Org.:

Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1083221

Patent Number(s):

8367462

Application Number:

13/091,855

Assignee:

Georgia Tech Research Corporation (Atlanta, GA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L33/0087 - {with a substrate not being a II-VI compound}
H01L21/02554 - {Oxides}
H01L33/18 - within the light emitting region

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L33/28 - containing only elements of group II and group VI of the periodic system
H01L33/08 - with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L21/02472 - {Oxides}
H01L21/02603 - {Nanowires}
H01L21/02494 - {Structure}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02639 - {Preparation of substrate for selective deposition}

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DOE Contract Number:  

FG02-07ER46394

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE