Electrical device fabrication from nanotube formations
Abstract
A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.
- Inventors:
- Issue Date:
- Research Org.:
- ORO (Oak Ridge Office, Oak Ridge, TN (United States))
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083055
- Patent Number(s):
- 8394664
- Application Number:
- 11/910,522
- Assignee:
- William Marsh Rice University (Houston, TX)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Nicholas, Nolan Walker, Kittrell, W. Carter, Kim, Myung Jong, and Schmidt, Howard K. Electrical device fabrication from nanotube formations. United States: N. p., 2013.
Web.
Nicholas, Nolan Walker, Kittrell, W. Carter, Kim, Myung Jong, & Schmidt, Howard K. Electrical device fabrication from nanotube formations. United States.
Nicholas, Nolan Walker, Kittrell, W. Carter, Kim, Myung Jong, and Schmidt, Howard K. Tue .
"Electrical device fabrication from nanotube formations". United States. https://www.osti.gov/servlets/purl/1083055.
@article{osti_1083055,
title = {Electrical device fabrication from nanotube formations},
author = {Nicholas, Nolan Walker and Kittrell, W. Carter and Kim, Myung Jong and Schmidt, Howard K.},
abstractNote = {A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 12 00:00:00 EDT 2013},
month = {Tue Mar 12 00:00:00 EDT 2013}
}
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