Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
Abstract
A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1082895
- Patent Number(s):
- 8349633
- Application Number:
- 12/471,690
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Allerman, Andrew A., Crawford, Mary H., and Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films. United States: N. p., 2013.
Web.
Allerman, Andrew A., Crawford, Mary H., & Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films. United States.
Allerman, Andrew A., Crawford, Mary H., and Lee, Stephen R. Tue .
"Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films". United States. https://www.osti.gov/servlets/purl/1082895.
@article{osti_1082895,
title = {Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films},
author = {Allerman, Andrew A. and Crawford, Mary H. and Lee, Stephen R.},
abstractNote = {A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {1}
}
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Works referenced in this record:
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
journal, June 2003
- Kida, Yoshihiro; Shibata, Tomohiko; Miyake, Hideto
- Japanese Journal of Applied Physics, Vol. 42, Issue Part 2, No. 6A
Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
journal, October 2005
- Wang, T.; Bai, J.; Parbrook, P. J.
- Applied Physics Letters, Vol. 87, Issue 15