skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of fabricating a solar cell with a tunnel dielectric layer

Abstract

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
SunPower Corporation (San Jose, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1082337
Patent Number(s):
8334161
Application Number:
12/829,922
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David, and Waldhauer, Ann. Method of fabricating a solar cell with a tunnel dielectric layer. United States: N. p., 2012. Web.
Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David, & Waldhauer, Ann. Method of fabricating a solar cell with a tunnel dielectric layer. United States.
Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David, and Waldhauer, Ann. Tue . "Method of fabricating a solar cell with a tunnel dielectric layer". United States. https://www.osti.gov/servlets/purl/1082337.
@article{osti_1082337,
title = {Method of fabricating a solar cell with a tunnel dielectric layer},
author = {Dennis, Tim and Harrington, Scott and Manning, Jane and Smith, David and Waldhauer, Ann},
abstractNote = {Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {12}
}

Patent:

Save / Share:

Works referenced in this record:

Physical and Electrical Characterization of Thin Anodic Oxides on Si(100)
journal, January 1995


In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements
journal, January 1995


Processing dependence of metal/tunnel‐oxide/silicon junctions
journal, May 1980


Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors
journal, January 1996


Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acid
journal, June 1996


Defects in silicon substrates
journal, January 1977