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Title: Semiconductive materials and associated uses thereof

Abstract

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

Inventors:
; ;
Issue Date:
Research Org.:
Washington State University Research Foundation (Pullman, WA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1079502
Patent Number(s):
8283637
Application Number:
13/006,050
Assignee:
Washington State University Research Foundation (Pullman, WA)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
FG07-06IDI4724
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lynn, Kelvin, Jones, Kelly, and Ciampi, Guido. Semiconductive materials and associated uses thereof. United States: N. p., 2012. Web.
Lynn, Kelvin, Jones, Kelly, & Ciampi, Guido. Semiconductive materials and associated uses thereof. United States.
Lynn, Kelvin, Jones, Kelly, and Ciampi, Guido. Tue . "Semiconductive materials and associated uses thereof". United States. https://www.osti.gov/servlets/purl/1079502.
@article{osti_1079502,
title = {Semiconductive materials and associated uses thereof},
author = {Lynn, Kelvin and Jones, Kelly and Ciampi, Guido},
abstractNote = {High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {10}
}