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Title: Strained layer superlattice focal plane array having a planar structure

Abstract

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1079246
Patent Number(s):
8,293,566
Application Number:
12/815,714
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Kim, Jin K, Carroll, Malcolm S, Gin, Aaron, Marsh, Phillip F, Young, Erik W, and Cich, Michael J. Strained layer superlattice focal plane array having a planar structure. United States: N. p., 2012. Web.
Kim, Jin K, Carroll, Malcolm S, Gin, Aaron, Marsh, Phillip F, Young, Erik W, & Cich, Michael J. Strained layer superlattice focal plane array having a planar structure. United States.
Kim, Jin K, Carroll, Malcolm S, Gin, Aaron, Marsh, Phillip F, Young, Erik W, and Cich, Michael J. Tue . "Strained layer superlattice focal plane array having a planar structure". United States. https://www.osti.gov/servlets/purl/1079246.
@article{osti_1079246,
title = {Strained layer superlattice focal plane array having a planar structure},
author = {Kim, Jin K and Carroll, Malcolm S and Gin, Aaron and Marsh, Phillip F and Young, Erik W and Cich, Michael J},
abstractNote = {An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {10}
}

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