Near-infrared photodetector with reduced dark current
Abstract
A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1079218
- Patent Number(s):
- 8299497
- Application Number:
- 12/827,587
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Klem, John F, and Kim, Jin K. Near-infrared photodetector with reduced dark current. United States: N. p., 2012.
Web.
Klem, John F, & Kim, Jin K. Near-infrared photodetector with reduced dark current. United States.
Klem, John F, and Kim, Jin K. Tue .
"Near-infrared photodetector with reduced dark current". United States. https://www.osti.gov/servlets/purl/1079218.
@article{osti_1079218,
title = {Near-infrared photodetector with reduced dark current},
author = {Klem, John F and Kim, Jin K},
abstractNote = {A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {10}
}
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Works referenced in this record:
Mesa-isolated InGaAs photodetectors with low dark current
journal, July 2009
- Klem, J. F.; Kim, J. K.; Cich, M. J.
- Applied Physics Letters, Vol. 95, Issue 3
nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006
- Maimon, S.; Wicks, G. W.
- Applied Physics Letters, Vol. 89, Issue 15