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Title: Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

Abstract

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Inventors:
; ; ;
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1078296
Patent Number(s):
8258482
Application Number:
12/472,081
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Nikolic, Rebecca J., Conway, Adam M., Nelson, Art J., and Payne, Stephen A. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof. United States: N. p., 2012. Web.
Nikolic, Rebecca J., Conway, Adam M., Nelson, Art J., & Payne, Stephen A. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof. United States.
Nikolic, Rebecca J., Conway, Adam M., Nelson, Art J., and Payne, Stephen A. Tue . "Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof". United States. https://www.osti.gov/servlets/purl/1078296.
@article{osti_1078296,
title = {Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof},
author = {Nikolic, Rebecca J. and Conway, Adam M. and Nelson, Art J. and Payne, Stephen A.},
abstractNote = {In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {9}
}

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Works referenced in this record:

HgCdTe/CdZnTe P-I-N high-energy photon detectors
journal, August 1996


Properties of the CdTe/InSb interface studied by optical and surface analytical techniques
journal, July 2006


HgTe/CdTe heterojunctions: A lattice‐matched Schottky barrier structure
journal, April 1982


nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006


Direct comparison of the performance of CZT detectors contacted with various metals
conference, August 2005


Mis structures on Hg1-xCdxTe/CdTe/GaAs epilayers
journal, April 1990