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Title: Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1078296
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA) LLNL
Patent Number(s):
8,258,482
Application Number:
12/472,081
Contract Number:
AC52-07NA27344
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY