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Title: Thick film hydrogen sensor

Abstract

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

Inventors:
;
Issue Date:
Research Org.:
Lockheed Martin Energy Syst Inc
OSTI Identifier:
106700
Patent Number(s):
5,451,920
Application Number:
PAN: 8-170,628
Assignee:
Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 19 Sep 1995
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN FUEL; MONITORS; DESIGN; HYDROGEN; DETECTION; PALLADIUM; DEPOSITION; SINTERING; ELECTRICAL INSULATION

Citation Formats

Hoffheins, B S, and Lauf, R J. Thick film hydrogen sensor. United States: N. p., 1995. Web.
Hoffheins, B S, & Lauf, R J. Thick film hydrogen sensor. United States.
Hoffheins, B S, and Lauf, R J. Tue . "Thick film hydrogen sensor". United States.
@article{osti_106700,
title = {Thick film hydrogen sensor},
author = {Hoffheins, B S and Lauf, R J},
abstractNote = {A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {9}
}