Thick film hydrogen sensor
Abstract
A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 106700
- Patent Number(s):
- 5451920
- Application Number:
- PAN: 8-170,628
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 19 Sep 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 08 HYDROGEN FUEL; MONITORS; DESIGN; HYDROGEN; DETECTION; PALLADIUM; DEPOSITION; SINTERING; ELECTRICAL INSULATION
Citation Formats
Hoffheins, B S, and Lauf, R J. Thick film hydrogen sensor. United States: N. p., 1995.
Web.
Hoffheins, B S, & Lauf, R J. Thick film hydrogen sensor. United States.
Hoffheins, B S, and Lauf, R J. Tue .
"Thick film hydrogen sensor". United States.
@article{osti_106700,
title = {Thick film hydrogen sensor},
author = {Hoffheins, B S and Lauf, R J},
abstractNote = {A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {9}
}
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