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Title: Smooth electrode and method of fabricating same

Abstract

A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Inventors:
 [1];  [2];  [3]
  1. Northville, NY
  2. Albany, NY
  3. Niskayuna, NY
Issue Date:
Research Org.:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1063201
Patent Number(s):
8242006
Application Number:
11/962,494
Assignee:
General Electric Company (Niskayuna, NY)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC26-04NT42324
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Weaver, Stanton Earl, Kennerly, Stacey Joy, and Aimi, Marco Francesco. Smooth electrode and method of fabricating same. United States: N. p., 2012. Web.
Weaver, Stanton Earl, Kennerly, Stacey Joy, & Aimi, Marco Francesco. Smooth electrode and method of fabricating same. United States.
Weaver, Stanton Earl, Kennerly, Stacey Joy, and Aimi, Marco Francesco. Tue . "Smooth electrode and method of fabricating same". United States. https://www.osti.gov/servlets/purl/1063201.
@article{osti_1063201,
title = {Smooth electrode and method of fabricating same},
author = {Weaver, Stanton Earl and Kennerly, Stacey Joy and Aimi, Marco Francesco},
abstractNote = {A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 14 00:00:00 EDT 2012},
month = {Tue Aug 14 00:00:00 EDT 2012}
}

Works referenced in this record:

Through-wafer copper electroplating for three-dimensional interconnects
journal, June 2002


A novel electrically conductive wafer through hole filled vias interconnect for 3D MEMS packaging
conference, May 2003