Smooth electrode and method of fabricating same
Abstract
A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.
- Inventors:
-
- Northville, NY
- Albany, NY
- Niskayuna, NY
- Issue Date:
- Research Org.:
- National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1063201
- Patent Number(s):
- 8242006
- Application Number:
- 11/962,494
- Assignee:
- General Electric Company (Niskayuna, NY)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-04NT42324
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Weaver, Stanton Earl, Kennerly, Stacey Joy, and Aimi, Marco Francesco. Smooth electrode and method of fabricating same. United States: N. p., 2012.
Web.
Weaver, Stanton Earl, Kennerly, Stacey Joy, & Aimi, Marco Francesco. Smooth electrode and method of fabricating same. United States.
Weaver, Stanton Earl, Kennerly, Stacey Joy, and Aimi, Marco Francesco. Tue .
"Smooth electrode and method of fabricating same". United States. https://www.osti.gov/servlets/purl/1063201.
@article{osti_1063201,
title = {Smooth electrode and method of fabricating same},
author = {Weaver, Stanton Earl and Kennerly, Stacey Joy and Aimi, Marco Francesco},
abstractNote = {A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 14 00:00:00 EDT 2012},
month = {Tue Aug 14 00:00:00 EDT 2012}
}
Works referenced in this record:
Through-wafer copper electroplating for three-dimensional interconnects
journal, June 2002
- Nguyen, N. T.; Boellaard, E.; Pham, N. P.
- Journal of Micromechanics and Microengineering, Vol. 12, Issue 4
A novel electrically conductive wafer through hole filled vias interconnect for 3D MEMS packaging
conference, May 2003
- Premachandran, C. S.; Nagarajan, R.; Yu, Chen
- 53rd Electronic Components and Technology Conference, 2003. Proceedings.