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Title: High quality transparent conducting oxide thin films

Abstract

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Inventors:
 [1];  [2];  [3];  [2]
  1. Conifer, CO
  2. Golden, CO
  3. Evergreen, CO
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1058907
Patent Number(s):
8253012
Application Number:
12/441,707
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Gessert, Timothy A, Duenow, Joel N, Barnes, Teresa, and Coutts, Timothy J. High quality transparent conducting oxide thin films. United States: N. p., 2012. Web.
Gessert, Timothy A, Duenow, Joel N, Barnes, Teresa, & Coutts, Timothy J. High quality transparent conducting oxide thin films. United States.
Gessert, Timothy A, Duenow, Joel N, Barnes, Teresa, and Coutts, Timothy J. Tue . "High quality transparent conducting oxide thin films". United States. https://www.osti.gov/servlets/purl/1058907.
@article{osti_1058907,
title = {High quality transparent conducting oxide thin films},
author = {Gessert, Timothy A and Duenow, Joel N and Barnes, Teresa and Coutts, Timothy J},
abstractNote = {A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {8}
}

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Works referenced in this record:

New transparent conducting thin films using multicomponent oxides composed of ZnO and V2O5 prepared by magnetron sputtering
journal, May 2002


Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant
journal, July 2007


Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates
journal, July 2003


A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb
journal, January 2006


Properties of p-Type ZnO Grown by Oxidation of Zn-Group-V Compounds
journal, January 2006