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Title: Stacked switchable element and diode combination with a low breakdown switchable element

Abstract

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

Inventors:
 [1];  [2];  [2];  [3]
  1. Littleton, CO
  2. Englewood, CO
  3. Boulder, CO
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1055455
Patent Number(s):
8203154
Application Number:
10/555,766
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wang, Qi, Ward, James Scott, Hu, Jian, and Branz, Howard M. Stacked switchable element and diode combination with a low breakdown switchable element. United States: N. p., 2012. Web.
Wang, Qi, Ward, James Scott, Hu, Jian, & Branz, Howard M. Stacked switchable element and diode combination with a low breakdown switchable element. United States.
Wang, Qi, Ward, James Scott, Hu, Jian, and Branz, Howard M. Tue . "Stacked switchable element and diode combination with a low breakdown switchable element". United States. https://www.osti.gov/servlets/purl/1055455.
@article{osti_1055455,
title = {Stacked switchable element and diode combination with a low breakdown switchable element},
author = {Wang, Qi and Ward, James Scott and Hu, Jian and Branz, Howard M},
abstractNote = {A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2012},
month = {Tue Jun 19 00:00:00 EDT 2012}
}