Stacked switchable element and diode combination with a low breakdown switchable element
Abstract
A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.
- Inventors:
-
- Littleton, CO
- Englewood, CO
- Boulder, CO
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States); Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1055455
- Patent Number(s):
- 8203154
- Application Number:
- 10/555,766
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Wang, Qi, Ward, James Scott, Hu, Jian, and Branz, Howard M. Stacked switchable element and diode combination with a low breakdown switchable element. United States: N. p., 2012.
Web.
Wang, Qi, Ward, James Scott, Hu, Jian, & Branz, Howard M. Stacked switchable element and diode combination with a low breakdown switchable element. United States.
Wang, Qi, Ward, James Scott, Hu, Jian, and Branz, Howard M. Tue .
"Stacked switchable element and diode combination with a low breakdown switchable element". United States. https://www.osti.gov/servlets/purl/1055455.
@article{osti_1055455,
title = {Stacked switchable element and diode combination with a low breakdown switchable element},
author = {Wang, Qi and Ward, James Scott and Hu, Jian and Branz, Howard M},
abstractNote = {A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2012},
month = {Tue Jun 19 00:00:00 EDT 2012}
}