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Title: Boron nitride nanotubes

Abstract

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Inventors:
 [1];  [1];  [2]
  1. Newport News, VA
  2. Yorktown, VA
Issue Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1055440
Patent Number(s):
8206674
Application Number:
US patent applicaiton 12/152,414
Assignee:
National Institute of Aerospace Associates (Hampton, VA); The United States of America as represented by the Administration of NASA (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
DOE Contract Number:  
AC05-06OR23177
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Smith, Michael W, Jordan, Kevin, and Park, Cheol. Boron nitride nanotubes. United States: N. p., 2012. Web.
Smith, Michael W, Jordan, Kevin, & Park, Cheol. Boron nitride nanotubes. United States.
Smith, Michael W, Jordan, Kevin, and Park, Cheol. Wed . "Boron nitride nanotubes". United States. https://www.osti.gov/servlets/purl/1055440.
@article{osti_1055440,
title = {Boron nitride nanotubes},
author = {Smith, Michael W and Jordan, Kevin and Park, Cheol},
abstractNote = {Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {6}
}

Works referenced in this record:

Nanotubes in boron nitride laser heated at high pressure
journal, September 1996


Catalyst-free synthesis of boron nitride single-wall nanotubes with a preferred zig-zag configuration
journal, September 2001