Contact method to allow benign failure in ceramic capacitor having self-clearing feature
Abstract
A capacitor exhibiting a benign failure mode has a first electrode layer, a first ceramic dielectric layer deposited on a surface of the first electrode, and a second electrode layer disposed on the ceramic dielectric layer, wherein selected areas of the ceramic dielectric layer have additional dielectric material of sufficient thickness to exhibit a higher dielectric breakdown voltage than the remaining majority of the dielectric layer. The added thickness of the dielectric layer in selected areas allows lead connections to be made at the selected areas of greater dielectric thickness while substantially eliminating a risk of dielectric breakdown and failure at the lead connections, whereby the benign failure mode is preserved.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1054078
- Patent Number(s):
- 8208239
- Assignee:
- Delphi Technologies, Inc. (Troy, MI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Myers, John D, and Taylor, Ralph S. Contact method to allow benign failure in ceramic capacitor having self-clearing feature. United States: N. p., 2012.
Web.
Myers, John D, & Taylor, Ralph S. Contact method to allow benign failure in ceramic capacitor having self-clearing feature. United States.
Myers, John D, and Taylor, Ralph S. Tue .
"Contact method to allow benign failure in ceramic capacitor having self-clearing feature". United States. https://www.osti.gov/servlets/purl/1054078.
@article{osti_1054078,
title = {Contact method to allow benign failure in ceramic capacitor having self-clearing feature},
author = {Myers, John D and Taylor, Ralph S},
abstractNote = {A capacitor exhibiting a benign failure mode has a first electrode layer, a first ceramic dielectric layer deposited on a surface of the first electrode, and a second electrode layer disposed on the ceramic dielectric layer, wherein selected areas of the ceramic dielectric layer have additional dielectric material of sufficient thickness to exhibit a higher dielectric breakdown voltage than the remaining majority of the dielectric layer. The added thickness of the dielectric layer in selected areas allows lead connections to be made at the selected areas of greater dielectric thickness while substantially eliminating a risk of dielectric breakdown and failure at the lead connections, whereby the benign failure mode is preserved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {6}
}