Single P-N junction tandem photovoltaic device
Abstract
A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
- Inventors:
-
- Kensington, CA
- (Berkeley, CA)
- Lafayette, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1039888
- Patent Number(s):
- 8129614
- Application Number:
- 13/275,079
- Assignee:
- RoseStreet Labs Energy (Phoenix, AZ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Single P-N junction tandem photovoltaic device. United States: N. p., 2012.
Web.
Walukiewicz, Wladyslaw, Ager, III, Joel W., & Yu, Kin Man. Single P-N junction tandem photovoltaic device. United States.
Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Tue .
"Single P-N junction tandem photovoltaic device". United States. https://www.osti.gov/servlets/purl/1039888.
@article{osti_1039888,
title = {Single P-N junction tandem photovoltaic device},
author = {Walukiewicz, Wladyslaw and Ager, III, Joel W. and Yu, Kin Man},
abstractNote = {A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {3}
}
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Works referenced in this record:
Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
journal, April 1994
- Yamamoto, Akio; Tsujino, Mitsunori; Ohkubo, Mitsugu
- Journal of Crystal Growth, Vol. 137, Issue 3-4
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
journal, August 2004
- Walukiewicz, W.; Li, S. X.; Wu, J.
- Journal of Crystal Growth, Vol. 269, Issue 1