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Title: Multiband semiconductor compositions for photovoltaic devices

Abstract

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Inventors:
 [1];  [2];  [3]
  1. Kensington, CA
  2. Lafayette, CA
  3. Belmont, MA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1039887
Patent Number(s):
8129615
Application Number:
12/009,505
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Walukiewicz, Wladyslaw, Yu, Kin Man, and Wu, Junqiao. Multiband semiconductor compositions for photovoltaic devices. United States: N. p., 2012. Web.
Walukiewicz, Wladyslaw, Yu, Kin Man, & Wu, Junqiao. Multiband semiconductor compositions for photovoltaic devices. United States.
Walukiewicz, Wladyslaw, Yu, Kin Man, and Wu, Junqiao. Tue . "Multiband semiconductor compositions for photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1039887.
@article{osti_1039887,
title = {Multiband semiconductor compositions for photovoltaic devices},
author = {Walukiewicz, Wladyslaw and Yu, Kin Man and Wu, Junqiao},
abstractNote = {The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {3}
}

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Works referenced in this record:

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journal, July 2003


Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1−x formed by N ion implantation
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  • https://doi.org/10.1109/PVSC.2002.1190713

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