Ultra-thin ohmic contacts for p-type nitride light emitting devices
Abstract
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.
- Inventors:
-
- Raleigh, NC
- Cary, NC
- Chapel Hill, NC
- Santa Barbara, CA
- Ventura, CA
- Issue Date:
- Research Org.:
- National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1035052
- Patent Number(s):
- 8089090
- Application Number:
- US patent applicaiton 11/191,111
- Assignee:
- Cree, Inc. (Durham, NC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-00NT40985
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States: N. p., 2012.
Web.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, & Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Tue .
"Ultra-thin ohmic contacts for p-type nitride light emitting devices". United States. https://www.osti.gov/servlets/purl/1035052.
@article{osti_1035052,
title = {Ultra-thin ohmic contacts for p-type nitride light emitting devices},
author = {Raffetto, Mark and Bharathan, Jayesh and Haberern, Kevin and Bergmann, Michael and Emerson, David and Ibbetson, James and Li, Ting},
abstractNote = {A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 03 00:00:00 EST 2012},
month = {Tue Jan 03 00:00:00 EST 2012}
}
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