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Title: Ultra-thin ohmic contacts for p-type nitride light emitting devices

Abstract

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Inventors:
 [1];  [2];  [2];  [3];  [3];  [4];  [5]
  1. Raleigh, NC
  2. Cary, NC
  3. Chapel Hill, NC
  4. Santa Barbara, CA
  5. Ventura, CA
Issue Date:
Research Org.:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1035052
Patent Number(s):
8089090
Application Number:
US patent applicaiton 11/191,111
Assignee:
Cree, Inc. (Durham, NC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC26-00NT40985
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States: N. p., 2012. Web.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, & Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Tue . "Ultra-thin ohmic contacts for p-type nitride light emitting devices". United States. https://www.osti.gov/servlets/purl/1035052.
@article{osti_1035052,
title = {Ultra-thin ohmic contacts for p-type nitride light emitting devices},
author = {Raffetto, Mark and Bharathan, Jayesh and Haberern, Kevin and Bergmann, Michael and Emerson, David and Ibbetson, James and Li, Ting},
abstractNote = {A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {1}
}