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Title: Extreme temperature robust optical sensor designs and fault-tolerant signal processing

Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.
Inventors:
 [1];  [2]
  1. Oviedo, FL
  2. Tujunga, CA
Issue Date:
OSTI Identifier:
1035035
Assignee:
Nusensors, Inc. (Tujunga, CA); University of Central Florida (Orlando, FL) NETL
Patent Number(s):
8,096,704
Application Number:
12/468,359
Contract Number:
FC26-03NT41923
Research Org:
National Energy Technology Lab. (NETL), Pittsburgh, PA, and Morgantown, WV (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
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