Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure
Abstract
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A.sub.8TM.sub.y.sub.1.sup.1TM.sub.y.sub.2.sup.2 . . . TM.sub.y.sub.n.sup.nM.sub.zX.sub.46-y.sub.1.sub.-y.sub.2.sub.- . . . -y.sub.n.sub.-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM.sup.1, TM.sup.2, and TM.sup.n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y.sub.1, y.sub.2, y.sub.n and Z are actual compositions of TM.sup.1, TM.sup.2, TM.sup.n, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8q.sub.A-|.DELTA.q.sub.1|y.sub.1-|.DELTA.q.sub.2|y.sub.2- . . . -|.DELTA.q.sub.n|y.sub.n, wherein q.sub.A is a charge state of A, and wherein .DELTA.q.sub.1, .DELTA.q.sub.2, .DELTA.q.sub.n are, respectively, the nominal charge state of the first, second, and n-th TM.
- Inventors:
-
- Lakeshore, CA
- Troy, MI
- Shanghai, CN
- Issue Date:
- Research Org.:
- GM Global Technology Operations LLC (Detroit, MI)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1034909
- Patent Number(s):
- 8097802
- Application Number:
- 12/434,333
- Assignee:
- GM Global Technology Operations LLC (Detroit, MI)
- DOE Contract Number:
- FC26-04NT42278
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yang, Jihui, Shi, Xun, Bai, Shengqiang, Zhang, Wenqing, Chen, Lidong, and Yang, Jiong. Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure. United States: N. p., 2012.
Web.
Yang, Jihui, Shi, Xun, Bai, Shengqiang, Zhang, Wenqing, Chen, Lidong, & Yang, Jiong. Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure. United States.
Yang, Jihui, Shi, Xun, Bai, Shengqiang, Zhang, Wenqing, Chen, Lidong, and Yang, Jiong. Tue .
"Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure". United States. https://www.osti.gov/servlets/purl/1034909.
@article{osti_1034909,
title = {Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure},
author = {Yang, Jihui and Shi, Xun and Bai, Shengqiang and Zhang, Wenqing and Chen, Lidong and Yang, Jiong},
abstractNote = {A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A.sub.8TM.sub.y.sub.1.sup.1TM.sub.y.sub.2.sup.2 . . . TM.sub.y.sub.n.sup.nM.sub.zX.sub.46-y.sub.1.sub.-y.sub.2.sub.- . . . -y.sub.n.sub.-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM.sup.1, TM.sup.2, and TM.sup.n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y.sub.1, y.sub.2, y.sub.n and Z are actual compositions of TM.sup.1, TM.sup.2, TM.sup.n, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8q.sub.A-|.DELTA.q.sub.1|y.sub.1-|.DELTA.q.sub.2|y.sub.2- . . . -|.DELTA.q.sub.n|y.sub.n, wherein q.sub.A is a charge state of A, and wherein .DELTA.q.sub.1, .DELTA.q.sub.2, .DELTA.q.sub.n are, respectively, the nominal charge state of the first, second, and n-th TM.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Estimation of the thermal band gap of a semiconductor from seebeck measurements
journal, July 1999
- Goldsmid, H. J.; Sharp, J. W.
- Journal of Electronic Materials, Vol. 28, Issue 7
Skutterudite antimonides: Quasilinear bands and unusual transport
journal, October 1994
- Singh, David J.; Pickett, Warren E.
- Physical Review B, Vol. 50, Issue 15
Crystal Structure, Band Structure, and Physical Properties of Ba 8 Cu 6 - x Ge 40+ x (0 ≤ x ≤ 0.7)
journal, September 2006
- Johnsen, Simon; Bentien, Anders; Madsen, Georg K. H.
- Chemistry of Materials, Vol. 18, Issue 19
Structure and Lattice Thermal Conductivity of Fractionally Filled Skutterudites: Solid Solutions of Fully Filled and Unfilled End Members
journal, April 1998
- Meisner, G. P.; Morelli, D. T.; Hu, S.
- Physical Review Letters, Vol. 80, Issue 16
Structure and properties of Ba8Ga16Ge30 clathrates by a novel synthesis method using CO gas reductive atmosphere
journal, April 2005
- Matsui, T.; Furukawa, J.; Tsukamoto, K.
- Journal of Alloys and Compounds, Vol. 391, Issue 1-2
Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds
journal, August 2004
- Yang, J.; Meisner, G. P.; Chen, L.
- Applied Physics Letters, Vol. 85, Issue 7
Optimization of the thermoelectric properties of Ba8Ga16Ge30
journal, June 2008
- Martin, J.; Wang, H.; Nolas, G. S.
- Applied Physics Letters, Vol. 92, Issue 22
Effect of transition element substitution on thermoelectric properties of semiconductor clathrate compounds
conference, January 2003
- Anno, H.; Hokazono, M.; Kawamura, M.
- Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726)
Figure of merit for thermoelectrics
journal, February 1989
- Mahan, G. D.
- Journal of Applied Physics, Vol. 65, Issue 4
Crystal structure and thermoelectric properties of type-I clathrate compounds in the Ba–Ga–Ge system
journal, October 2006
- Okamoto, Norihiko L.; Kishida, Kyosuke; Tanaka, Katsushi
- Journal of Applied Physics, Vol. 100, Issue 7
Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30
journal, January 2006
- Saramat, A.; Svensson, G.; Palmqvist, A. E. C.
- Journal of Applied Physics, Vol. 99, Issue 2