Nanoparticle-based etching of silicon surfaces
Abstract
A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.
- Inventors:
-
- Boulder, CO
- Denver, CO
- Evergreen, CO
- Littleton, CO
- Atlanta, GA
- Golden, CO
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1034302
- Patent Number(s):
- 8075792
- Application Number:
- 12/053,372
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Branz, Howard, Duda, Anna, Ginley, David S, Yost, Vernon, Meier, Daniel, and Ward, James S. Nanoparticle-based etching of silicon surfaces. United States: N. p., 2011.
Web.
Branz, Howard, Duda, Anna, Ginley, David S, Yost, Vernon, Meier, Daniel, & Ward, James S. Nanoparticle-based etching of silicon surfaces. United States.
Branz, Howard, Duda, Anna, Ginley, David S, Yost, Vernon, Meier, Daniel, and Ward, James S. Tue .
"Nanoparticle-based etching of silicon surfaces". United States. https://www.osti.gov/servlets/purl/1034302.
@article{osti_1034302,
title = {Nanoparticle-based etching of silicon surfaces},
author = {Branz, Howard and Duda, Anna and Ginley, David S and Yost, Vernon and Meier, Daniel and Ward, James S},
abstractNote = {A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {12}
}
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