Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

Title: Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Inventors:

Stoddard, Nathan G ^[1]

Gettysburg, PA

Issue Date:: 2011-11-01

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1033936

Patent Number(s):: 8048221

Application Number:: 11/624,365

Assignee:: Stoddard, Nathan G. (Gettysburg, PA)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/00 - Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S117/917 - Magnetic

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/003 - {Heating or cooling of the melt or the crystallised material}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/545 - Microcrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T117/1092 - Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L31/03685 - {including microcrystalline silicon, uc-Si}
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B28/06 - by normal freezing or freezing under temperature gradient
C30B11/14 - characterised by the seed, e.g. its crystallographic orientation
C30B29/06 - Silicon

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DOE Contract Number:: AC36-98GO10337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics.  United States: N. p., 2011. 
        Web.

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                    Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics.  United States.

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                    Stoddard, Nathan G. Tue .  
        "Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics".  United States.  https://www.osti.gov/servlets/purl/1033936.

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@article{osti_1033936,

  title        = {Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics},

  author       = {Stoddard, Nathan G},

  abstractNote = {Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {11}

}

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Works referenced in this record:

Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
journal, May 1996

Périchaud, Isabelle; Dour, Gilles; Pillin, B.
Solid State Phenomena, Vol. 51-52
https://doi.org/10.4028/www.scientific.net/SSP.51-52.473

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979

Ciszek, T. F.; Schwuttke, G. H.; Yang, K. H.
Journal of Crystal Growth, Vol. 46, Issue 4, p. 527-533
https://doi.org/10.1016/0022-0248(79)90041-1

Bulk multicrystalline silicon growth for photovoltaic (PV) application
journal, April 2008

Wu, Bei; Stoddard, Nathan; Ma, Ronghui
Journal of Crystal Growth, Vol. 310, Issue 7-9, p. 2178-2184
https://doi.org/10.1016/j.jcrysgro.2007.11.194

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005

Kitamura, Masayuki; Usami, Noritaka; Sugawara, Takamasa
Journal of Crystal Growth, Vol. 280, Issue 3-4, p. 419-424
https://doi.org/10.1016/j.jcrysgro.2005.04.049

Development of a rapid solidification process with a double-roller method
journal, February 1988

Shibuya, Kiyoshi; Kogiku, Fumio; Yukumoto, Masao
Materials Science and Engineering, Vol. 98, p. 25-28
https://doi.org/10.1016/0025-5416(88)90119-X

Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985

Ciszek, T. F.
Journal of The Electrochemical Society, Vol. 132, Issue 4
https://doi.org/10.1149/1.2113994

Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002

Durand, Francis
Solar Energy Materials and Solar Cells, Vol. 72, Issue 1-4, p. 125-132
https://doi.org/10.1016/S0927-0248(01)00157-X

Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997

Dour, G.; Durand, F.; Brechet, Y.
Modelling and Simulation in Materials Science and Engineering, Vol. 5, Issue 3
https://doi.org/10.1088/0965-0393/5/3/006

Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon
journal, January 2005

Shin, Je Sik; Kim, H. S.; Lee, Sang Mok
Materials Science Forum, Vol. 475-479
https://doi.org/10.4028/www.scientific.net/MSF.475-479.2671

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Similar Records

Title: Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

Abstract

Citation Formats

Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible journal, May 1996

Directionally solidified solar-grade silicon using carbon crucibles journal, April 1979

Bulk multicrystalline silicon growth for photovoltaic (PV) application journal, April 2008

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique journal, July 2005

Development of a rapid solidification process with a double-roller method journal, February 1988

Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation journal, January 1985

Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics journal, April 2002

Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon journal, May 1997

Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon journal, January 2005

Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
journal, May 1996

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979

Bulk multicrystalline silicon growth for photovoltaic (PV) application
journal, April 2008

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005

Development of a rapid solidification process with a double-roller method
journal, February 1988

Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985

Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002

Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997

Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon
journal, January 2005