Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
Abstract
Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.
- Inventors:
-
- Gettysburg, PA
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1033936
- Patent Number(s):
- 8048221
- Application Number:
- 11/624,365
- Assignee:
- Stoddard, Nathan G. (Gettysburg, PA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-98GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics. United States: N. p., 2011.
Web.
Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics. United States.
Stoddard, Nathan G. Tue .
"Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics". United States. https://www.osti.gov/servlets/purl/1033936.
@article{osti_1033936,
title = {Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics},
author = {Stoddard, Nathan G},
abstractNote = {Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EDT 2011},
month = {Tue Nov 01 00:00:00 EDT 2011}
}
Works referenced in this record:
Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
journal, May 1996
- PĂ©richaud, Isabelle; Dour, Gilles; Pillin, B.
- Solid State Phenomena, Vol. 51-52
Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979
- Ciszek, T. F.; Schwuttke, G. H.; Yang, K. H.
- Journal of Crystal Growth, Vol. 46, Issue 4, p. 527-533
Bulk multicrystalline silicon growth for photovoltaic (PV) application
journal, April 2008
- Wu, Bei; Stoddard, Nathan; Ma, Ronghui
- Journal of Crystal Growth, Vol. 310, Issue 7-9, p. 2178-2184
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005
- Kitamura, Masayuki; Usami, Noritaka; Sugawara, Takamasa
- Journal of Crystal Growth, Vol. 280, Issue 3-4, p. 419-424
Development of a rapid solidification process with a double-roller method
journal, February 1988
- Shibuya, Kiyoshi; Kogiku, Fumio; Yukumoto, Masao
- Materials Science and Engineering, Vol. 98, p. 25-28
Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985
- Ciszek, T. F.
- Journal of The Electrochemical Society, Vol. 132, Issue 4
Growth of Silicon Ingots by Hem for Photovoltaic Applications
book, January 1987
- Khattak, C. P.; Schmid, F.
- Silicon Processing for Photovoltaics II
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002
- Durand, Francis
- Solar Energy Materials and Solar Cells, Vol. 72, Issue 1-4, p. 125-132
Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997
- Dour, G.; Durand, F.; Brechet, Y.
- Modelling and Simulation in Materials Science and Engineering, Vol. 5, Issue 3
Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon
journal, January 2005
- Shin, Je Sik; Kim, H. S.; Lee, Sang Mok
- Materials Science Forum, Vol. 475-479