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Title: Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Inventors:
 [1]
  1. Gettysburg, PA
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1033936
Patent Number(s):
8048221
Application Number:
11/624,365
Assignee:
Stoddard, Nathan G. (Gettysburg, PA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics. United States: N. p., 2011. Web.
Stoddard, Nathan G. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics. United States.
Stoddard, Nathan G. Tue . "Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics". United States. https://www.osti.gov/servlets/purl/1033936.
@article{osti_1033936,
title = {Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics},
author = {Stoddard, Nathan G},
abstractNote = {Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {11}
}

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Works referenced in this record:

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979


Bulk multicrystalline silicon growth for photovoltaic (PV) application
journal, April 2008


Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005


Development of a rapid solidification process with a double-roller method
journal, February 1988


Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985


Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997


Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon
journal, January 2005