Semiconductive materials and associated uses thereof

Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Semiconductive materials and associated uses thereof

Abstract

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

Inventors:

Lynn, Kelvin ^[1]; Jones, Kelly ^[2]; Ciampi, Guido ^[3]

Pullman, WA
Colfax, WA
Waltham, MA

Issue Date:: 2011-11-01

Research Org.:: Washington State University Research Foundation (Pullman, WA)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1033765

Patent Number(s):: 8049178

Application Number:: 12/202,026

Assignee:: Washington State University Research Foundation (Pullman, WA)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION

Show more

G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
G01T1/24 - with semiconductor detectors

Show less

DOE Contract Number:: FG07-06ID14724

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lynn, Kelvin, Jones, Kelly, and Ciampi, Guido. Semiconductive materials and associated uses thereof.  United States: N. p., 2011. 
        Web.

Copy to clipboard


                    Lynn, Kelvin, Jones, Kelly, & Ciampi, Guido. Semiconductive materials and associated uses thereof.  United States.

Copy to clipboard


                    Lynn, Kelvin, Jones, Kelly, and Ciampi, Guido. Tue .  
        "Semiconductive materials and associated uses thereof".  United States.  https://www.osti.gov/servlets/purl/1033765.

Copy to clipboard


                    
@article{osti_1033765,

  title        = {Semiconductive materials and associated uses thereof},

  author       = {Lynn, Kelvin and Jones, Kelly and Ciampi, Guido},

  abstractNote = {High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {11}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Compensation and deep levels in II–VI compounds
journal, December 1996

Castaldini, A.; Cavallini, A.; Fraboni, B.
Materials Science and Engineering: B, Vol. 42, Issue 1-3
https://doi.org/10.1016/S0921-5107(96)01726-6

Electronic properties of A centers in CdTe: A comparison with experiment
journal, October 1993

Biernacki, S.; Scherz, U.; Meyer, B. K.
Physical Review B, Vol. 48, Issue 16
https://doi.org/10.1103/PhysRevB.48.11726

Chapter 6 Growth Methods of CdTe Nuclear Detector Materials
book, January 1995

Hage-Ali, Makram; Siffert, Paul
Semiconductors for Room Temperature Nuclear Detector Applications
https://doi.org/10.1016/S0080-8784(08)62745-3

Self‐Activation and Self‐Coactivation in Zinc Sulfide Phosphors
journal, August 1956

Prener, J. S.; Williams, F. E.
The Journal of Chemical Physics, Vol. 25, Issue 2
https://doi.org/10.1063/1.1742892

Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors
journal, May 2002

Bushuev, A. V.; Zubarev, V. N.; Kozhin, A. F.
Atomic Energy, Vol. 92, Issue 5, p. 403-407
https://doi.org/10.1023/A:1019999528118

Effect of deep levels on semiconductor carrier concentrations in the case of "strong" compensation
journal, August 1982

Neumark, G. F.
Physical Review B, Vol. 26, Issue 4
https://doi.org/10.1103/PhysRevB.26.2250

Attempts to growth of undoped CdTe single crystals with high electrical resistivity
journal, April 1996

Rudolph, P.; Kawasaki, S.; Yamashita, S.
Journal of Crystal Growth, Vol. 161, Issue 1-4
https://doi.org/10.1016/0022-0248(95)00607-9

Fine-scale spatial response of CdZnTe radiation detectors
journal, June 1999

Brunett, B. A.; Van Scyoc, J. M.; Hilton, N. R.
IEEE Transactions on Nuclear Science, Vol. 46, Issue 3
https://doi.org/10.1109/23.775521

Role of native defects in wide-band-gap semiconductors
journal, February 1991

Laks, D. B.; Van de Walle, C. G.; Neumark, G. F.
Physical Review Letters, Vol. 66, Issue 5
https://doi.org/10.1103/PhysRevLett.66.648

Improved CdZnTe detectors grown by vertical Bridgman process
journal, January 1997

Lynn, K. G.; Weber, M.; Glass, H. L.
MRS Proceedings, Vol. 484
https://doi.org/10.1557/PROC-484-319

Extension of longwavelength IR photovoltaic detector operation to near room-temperatures
journal, December 1995

Piotrowski, Jósef; Gawron, Waldemar
Infrared Physics & Technology, Vol. 36, Issue 7
https://doi.org/10.1016/1350-4495(95)00033-X

First-principles study of DX centers in CdTe, ZnTe, and ${Cd}_{x}$ ${Zn}_{1 - x}$ Te alloys
journal, October 1995

Park, C. H.; Chadi, D. J.
Physical Review B, Vol. 52, Issue 16
https://doi.org/10.1103/PhysRevB.52.11884

Basic problems of vertical Bridgman growth of CdTe
journal, January 1993

Rudolph, Peter; Mühlberg, Manfred
Materials Science and Engineering: B, Vol. 16, Issue 1-3
https://doi.org/10.1016/0921-5107(93)90005-8

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
journal, May 1964

Mandel, G.
Physical Review, Vol. 134, Issue 4A
https://doi.org/10.1103/PhysRev.134.A1073

The effect of detector performance on high count rate PET imaging with a tomograph based on position-sensitive detectors
journal, February 1988

Mankoff, D. A.; Muehllehner, G.; Karp, J. S.
IEEE Transactions on Nuclear Science, Vol. 35, Issue 1
https://doi.org/10.1109/23.12793

Similar Records in DOE Patents and OSTI.GOV collections:

Semiconductive materials and associated uses thereof

Patent Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.
Full Text Available
Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Patent Perkins, John [Boulder, CO]; Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David [Evergreen, CO]; ...

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or othermore » opto-electronic properties. « less
Full Text Available
Hybrid materials and nanocomposite materials, methods of making same, and uses thereof

Patent Archer, Lynden A.; Yang, Zhengyuan Sam; Das, Shyamal Kumar

Hybrid materials and nanocomposite materials, methods of making and using such materials. The nanoparticles of the nanocomposite are formed in situ during pyrolysis of a hybrid material comprising metal precursor compounds. The nanoparticles are uniformly distributed in the carbon matrix of the nanocomposite. The nanocomposite materials can be used in devices such as, for example, electrodes and on-chip inductors.
Full Text Available
Polypeptide having or assisting in carbohydrate material degrading activity and uses thereof

Patent Schooneveld-Bergmans, Margot Elisabeth Francoise; Heijne, Wilbert Herman Marie; Los, Alrik Pieter

The invention relates to a polypeptide which comprises the amino acid sequence set out in SEQ ID NO: 2 or an amino acid sequence encoded by the nucleotide sequence of SEQ ID NO: 1, or a variant polypeptide or variant polynucleotide thereof, wherein the variant polypeptide has at least 76% sequence identity with the sequence set out in SEQ ID NO: 2 or the variant polynucleotide encodes a polypeptide that has at least 76% sequence identity with the sequence set out in SEQ ID NO: 2. The invention features the full length coding sequence of the novel gene as wellmore » « less
Full Text Available
Metal oxide-organic hybrid materials for heterogeneous catalysis and methods of making and using thereof

Patent Bloomfield, Aaron J.; Sheehan, Stafford W.; Collom, Samuel L.; ...

Catalysts prepared from abundant, cost effective metals, such as cobalt, nickel, chromium, manganese, iron, and copper, and containing one or more neutrally charged ligands (e.g., monodentate, bidentate, and/or polydentate ligands) and methods of making and using thereof are described herein. Exemplary ligands include, but are not limited to, phosphine ligands, nitrogen-based ligands, sulfur-based ligands, and/or arsenic-based ligands. In some embodiments, the catalyst is a cobalt-based catalyst or a nickel-based catalyst. The catalysts described herein are stable and active at neutral pH and in a wide range of buffers that are both weak and strong proton acceptors. While its activity ismore » « less
Full Text Available

Similar Records

Title: Semiconductive materials and associated uses thereof

Abstract

Citation Formats

Compensation and deep levels in II–VI compounds journal, December 1996

Electronic properties of A centers in CdTe: A comparison with experiment journal, October 1993

Chapter 6 Growth Methods of CdTe Nuclear Detector Materials book, January 1995

Self‐Activation and Self‐Coactivation in Zinc Sulfide Phosphors journal, August 1956

Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors journal, May 2002

Effect of deep levels on semiconductor carrier concentrations in the case of "strong" compensation journal, August 1982

Attempts to growth of undoped CdTe single crystals with high electrical resistivity journal, April 1996

Fine-scale spatial response of CdZnTe radiation detectors journal, June 1999

Role of native defects in wide-band-gap semiconductors journal, February 1991

Improved CdZnTe detectors grown by vertical Bridgman process journal, January 1997

Extension of longwavelength IR photovoltaic detector operation to near room-temperatures journal, December 1995

First-principles study of DX centers in CdTe, ZnTe, and Cd x Zn 1 − x Te alloys journal, October 1995

Basic problems of vertical Bridgman growth of CdTe journal, January 1993

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory journal, May 1964

The effect of detector performance on high count rate PET imaging with a tomograph based on position-sensitive detectors journal, February 1988

Compensation and deep levels in II–VI compounds
journal, December 1996

Electronic properties of A centers in CdTe: A comparison with experiment
journal, October 1993

Chapter 6 Growth Methods of CdTe Nuclear Detector Materials
book, January 1995

Self‐Activation and Self‐Coactivation in Zinc Sulfide Phosphors
journal, August 1956

Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors
journal, May 2002

Effect of deep levels on semiconductor carrier concentrations in the case of "strong" compensation
journal, August 1982

Attempts to growth of undoped CdTe single crystals with high electrical resistivity
journal, April 1996

Fine-scale spatial response of CdZnTe radiation detectors
journal, June 1999

Role of native defects in wide-band-gap semiconductors
journal, February 1991

Improved CdZnTe detectors grown by vertical Bridgman process
journal, January 1997

Extension of longwavelength IR photovoltaic detector operation to near room-temperatures
journal, December 1995

First-principles study of DX centers in CdTe, ZnTe, and ${Cd}_{x}$ ${Zn}_{1 - x}$ Te alloys
journal, October 1995

Basic problems of vertical Bridgman growth of CdTe
journal, January 1993

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
journal, May 1964

The effect of detector performance on high count rate PET imaging with a tomograph based on position-sensitive detectors
journal, February 1988