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Title: Electrostatic force assisted deposition of graphene

Abstract

An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

Inventors:
 [1]
  1. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1033226
Patent Number(s):
8057863
Application Number:
12/630,989
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liang, Xiaogan. Electrostatic force assisted deposition of graphene. United States: N. p., 2011. Web.
Liang, Xiaogan. Electrostatic force assisted deposition of graphene. United States.
Liang, Xiaogan. Tue . "Electrostatic force assisted deposition of graphene". United States. https://www.osti.gov/servlets/purl/1033226.
@article{osti_1033226,
title = {Electrostatic force assisted deposition of graphene},
author = {Liang, Xiaogan},
abstractNote = {An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {11}
}

Patent:

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Works referenced in this record:

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