skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of making low work function component

Abstract

A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.

Inventors:
 [1];  [2];  [3]
  1. Niskayuna, NY
  2. Northville, NY
  3. Delmar, NY
Issue Date:
Research Org.:
GE Global Research, Niskayuna, New York (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1033222
Patent Number(s):
8058159
Application Number:
12/198,955
Assignee:
General Electric Company (Niskayuna, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
FC26-04NT42324
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Robinson, Vance, Weaver, Stanton Earl, and Michael, Joseph Darryl. Method of making low work function component. United States: N. p., 2011. Web.
Robinson, Vance, Weaver, Stanton Earl, & Michael, Joseph Darryl. Method of making low work function component. United States.
Robinson, Vance, Weaver, Stanton Earl, and Michael, Joseph Darryl. Tue . "Method of making low work function component". United States. https://www.osti.gov/servlets/purl/1033222.
@article{osti_1033222,
title = {Method of making low work function component},
author = {Robinson, Vance and Weaver, Stanton Earl and Michael, Joseph Darryl},
abstractNote = {A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {11}
}

Patent:

Save / Share:

Works referenced in this record:

Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam
journal, September 1997


Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs[sup +]
journal, January 2002


Work function change caused by alkali ion sputtering of a sample surface
journal, October 2000


Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS
journal, July 2006


Work-function changes in high-dose B-implanted Si with keV Cs + bombardment
journal, May 1999


History of industrial and commercial ion implantation 1906–1978
journal, July 2000


Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers
journal, April 2004


Work function change caused by alkali ion sputtering
journal, January 2003


Measurement and modeling of work function changes during low energy cesium sputtering
journal, March 2007


Characterization of the photoelectric effect on K+-implanted W samples
journal, January 1999


Characteristics of ultra-low-energy Cs+ ion beam bombardments
journal, January 2003


Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles
journal, January 2003


Factors affecting the retention of Cs+ primary ions in Si
journal, June 2004


Catalytic oxidation of silicon by cesium ion bombardment
journal, January 1991


Enhancement of the field emission of carbon nanotubes straightened by application of argon ion irradiation
journal, September 2003


Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation
journal, January 2001


Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation
journal, April 1995


Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages
journal, May 1989


Modification of electrode materials for plasma torches
journal, October 2005


Irradiation effects in carbon nanostructures
journal, July 1999


Improvement of Field-Emission Properties of Screen Printed Carbon Nanotube Films via Argon Plasma Treatment
journal, January 2006