Method of making low work function component

Robinson, Vance; Weaver, Stanton Earl; Michael, Joseph Darryl

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A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
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Title: Method of making low work function component

Abstract

A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.

Inventors:

Robinson, Vance ^[1]; Weaver, Stanton Earl ^[2]; Michael, Joseph Darryl ^[3]

Niskayuna, NY
Northville, NY
Delmar, NY

Issue Date:: 2011-11-15

Research Org.:: GE Global Research, Niskayuna, New York (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1033222

Patent Number(s):: 8058159

Application Number:: 12/198,955

Assignee:: General Electric Company (Niskayuna, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J9/022 - {of cold cathodes}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 {
H01L21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Show less

DOE Contract Number:: FC26-04NT42324

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Robinson, Vance, Weaver, Stanton Earl, and Michael, Joseph Darryl. Method of making low work function component.  United States: N. p., 2011. 
        Web.

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                    Robinson, Vance, Weaver, Stanton Earl, & Michael, Joseph Darryl. Method of making low work function component.  United States.

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                    Robinson, Vance, Weaver, Stanton Earl, and Michael, Joseph Darryl. Tue .  
        "Method of making low work function component".  United States.  https://www.osti.gov/servlets/purl/1033222.

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@article{osti_1033222,

  title        = {Method of making low work function component},

  author       = {Robinson, Vance and Weaver, Stanton Earl and Michael, Joseph Darryl},

  abstractNote = {A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {11}

}

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Works referenced in this record:

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journal, September 1997

Ko, Y. W.; Kim, S. I.
Journal of Applied Physics, Vol. 82, Issue 5
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Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs[sup +]
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Work function change caused by alkali ion sputtering of a sample surface
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Measurement and modeling of work function changes during low energy cesium sputtering
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Characteristics of ultra-low-energy Cs+ ion beam bombardments
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Similar Records

Title: Method of making low work function component

Abstract

Citation Formats

Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam journal, September 1997

Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs[sup +] journal, January 2002

Work function change caused by alkali ion sputtering of a sample surface journal, October 2000

Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications journal, January 2005

Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS journal, July 2006

Exponential scaling of sputtered negative-ion yields with transient work-function changes on Cs + -bombarded surfaces journal, December 1996

Work-function changes in high-dose B-implanted Si with keV Cs + bombardment journal, May 1999

History of industrial and commercial ion implantation 1906–1978 journal, July 2000

Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers journal, April 2004

Work function change caused by alkali ion sputtering journal, January 2003

Measurement and modeling of work function changes during low energy cesium sputtering journal, March 2007

Characterization of the photoelectric effect on K+-implanted W samples journal, January 1999

Characteristics of ultra-low-energy Cs+ ion beam bombardments journal, January 2003

Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles journal, January 2003

Factors affecting the retention of Cs+ primary ions in Si journal, June 2004

Catalytic oxidation of silicon by cesium ion bombardment journal, January 1991

Work function shifts and variations of ionization probabilities occurring during SIMS analyses using an in situ deposition of Cs0 journal, July 2004

Enhancement of the field emission of carbon nanotubes straightened by application of argon ion irradiation journal, September 2003

Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation journal, January 2001

Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation journal, April 1995

Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages journal, May 1989

Modification of electrode materials for plasma torches journal, October 2005

Irradiation effects in carbon nanostructures journal, July 1999

Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach journal, January 2003

Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation journal, June 2005

Improvement of Field-Emission Properties of Screen Printed Carbon Nanotube Films via Argon Plasma Treatment journal, January 2006

Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam
journal, September 1997

Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs[sup +]
journal, January 2002

Work function change caused by alkali ion sputtering of a sample surface
journal, October 2000

Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications
journal, January 2005

Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS
journal, July 2006

Exponential scaling of sputtered negative-ion yields with transient work-function changes on ${Cs}^{+}$ -bombarded surfaces
journal, December 1996

Work-function changes in high-dose B-implanted Si with keV ${Cs}^{+}$ bombardment
journal, May 1999

History of industrial and commercial ion implantation 1906–1978
journal, July 2000

Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers
journal, April 2004

Work function change caused by alkali ion sputtering
journal, January 2003

Measurement and modeling of work function changes during low energy cesium sputtering
journal, March 2007

Characterization of the photoelectric effect on K+-implanted W samples
journal, January 1999

Characteristics of ultra-low-energy Cs+ ion beam bombardments
journal, January 2003

Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles
journal, January 2003

Factors affecting the retention of Cs+ primary ions in Si
journal, June 2004

Catalytic oxidation of silicon by cesium ion bombardment
journal, January 1991

Work function shifts and variations of ionization probabilities occurring during SIMS analyses using an in situ deposition of Cs0
journal, July 2004

Enhancement of the field emission of carbon nanotubes straightened by application of argon ion irradiation
journal, September 2003

Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation
journal, January 2001

Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation
journal, April 1995

Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages
journal, May 1989

Modification of electrode materials for plasma torches
journal, October 2005

Irradiation effects in carbon nanostructures
journal, July 1999

Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach
journal, January 2003

Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation
journal, June 2005

Improvement of Field-Emission Properties of Screen Printed Carbon Nanotube Films via Argon Plasma Treatment
journal, January 2006